MOSFET 2N-CH 20V 10A 6-DFN
DMN2013UFX-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 20V 10A 6-DFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-VFDFN Exposed Pad, power - max 2.14W.
In Stock: 7,009
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 8.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 57.4nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 2607pF @ 10V |
| Power - Max | 2.14W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-VFDFN Exposed Pad |
| Supplier Device Package | W-DFN5020-6 |
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