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DMHC10H170SFJ-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays

DMHC10H170SFJ-13

Diodes Incorporated

MOSFET 2N/2P-CH 100V DFN5045-12

DMHC10H170SFJ-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N/2P-CH 100V DFN5045-12. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 12-VDFN Exposed Pad, power - max 2.1W.

In Stock: 8,165

Product Attributes

AttributeValue
Product StatusActive
FET Type2 N and 2 P-Channel (Half Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C2.9A, 2.3A
Rds On (Max) @ Id, Vgs160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1167pF @ 25V
Power - Max2.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case12-VDFN Exposed Pad
Supplier Device PackageV-DFN5045-12

Frequently Asked Questions

DMHC10H170SFJ-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N/2P-CH 100V DFN5045-12

The mounting type of DMHC10H170SFJ-13 is Surface Mount.

The operating temperature range of DMHC10H170SFJ-13 is -55°C ~ 150°C (TJ).

The package type of DMHC10H170SFJ-13 is 12-VDFN Exposed Pad.

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