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DMG6601LVT-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays

DMG6601LVT-7

Diodes Incorporated

MOSFET N/P-CH 30V 26TSOT

DMG6601LVT-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET N/P-CH 30V 26TSOT. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6, power - max 850mW.

In Stock: 9,768

Product Attributes

AttributeValue
Product StatusActive
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.8A, 2.5A
Rds On (Max) @ Id, Vgs55mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds422pF @ 15V
Power - Max850mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageTSOT-26

Frequently Asked Questions

DMG6601LVT-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET N/P-CH 30V 26TSOT

The mounting type of DMG6601LVT-7 is Surface Mount.

The operating temperature range of DMG6601LVT-7 is -55°C ~ 150°C (TJ).

The package type of DMG6601LVT-7 is SOT-23-6 Thin, TSOT-23-6.

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