RF POWER BIPOLAR TRANSISTOR, 1-E
MX0912B351Y is a Transistors - Bipolar (BJT) - RF manufactured by Ampleon USA Inc.. RF POWER BIPOLAR TRANSISTOR, 1-E. Key specifications: mounting type Chassis Mount, operating temperature 200°C (TJ), package / case SOT-439A, current - collector (ic) (max) 21A.
In Stock: 6,350
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Frequency - Transition | 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | 8dB |
| Power - Max | 960W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Current - Collector (Ic) (Max) | 21A |
| Operating Temperature | 200°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-439A |
| Supplier Device Package | CDFM2 |
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