IC DRAM 128MBIT PAR 54TSOP II
AS4C8M16SA-6TCN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 128MBIT PAR 54TSOP II. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 3V ~ 3.6V, package / case 54-TSOP (0.400", 10.16mm Width).
In Stock: 2,505
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 12ns |
| Access Time | 5 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W9864G6JB-6 TR | Winbond Electronics | 64MB SDR SDRAM X16, 166MHZ | 100% | View |
| AS4C8M16SA-6BINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PARALLEL 54TFBGA | 100% | View |
| MT46H16M16LFBF-6 AT:H | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60VFBGA | 94% | View |
| IS43LR32640A-6BL | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 90WBGA | 91% | View |
| AS4C64M32MD1-5BINTR | Alliance Memory, Inc. | IC DRAM 2GBIT PARALLEL 90FBGA | 83% | View |
| 71V3558SA100BQG8 | Renesas Electronics America Inc | IC SRAM 4.5MBIT PAR 165CABGA | 74% | View |
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