IC DRAM 2GBIT PARALLEL 90FBGA
AS4C64M32MD1-5BINTR is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 2GBIT PARALLEL 90FBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.9V, package / case 90-VFBGA.
In Stock: 2,632
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 2Gb (64M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-VFBGA |
| Supplier Device Package | 90-FBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W948V6KBHX5I TR | Winbond Electronics | 256MB LPDDR, X16, 200MHZ, INDUST | 100% | View |
| MT46H32M16LFBF-5 IT:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60VFBGA | 100% | View |
| MT46H32M32LFJG-5 IT:A | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 168VFBGA | 100% | View |
| MT46H8M16LFBF-5 IT:K | Micron Technology Inc. | IC DRAM 128MBIT PARALLEL 60VFBGA | 100% | View |
| IS43LR16640C-5BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 60TFBGA | 98% | View |
| MT48H32M16LFB4-6 IT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 54VFBGA | 92% | View |
Submit your RFQ for AS4C64M32MD1-5BINTR and get a quote within 24 hours.
3J LIMITED
