IC DRAM 128MBIT PAR 54TSOP II
AS4C8M16S-6TCN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 128MBIT PAR 54TSOP II. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 3V ~ 3.6V, package / case 54-TSOP (0.400", 10.16mm Width).
In Stock: 8,603
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 2ns |
| Access Time | 5 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
AS4C8M16S-6TCN is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W9812G6KB-6I | Winbond Electronics | IC DRAM 128MBIT LVTTL 54TFBGA | 100% | View |
| 70V3569S5BCI8 | Renesas Electronics America Inc | IC SRAM 576KBIT PAR 256CABGA | 98% | View |
| 70V3389S5PRF/P | Renesas Electronics America Inc | IC SRAM 1.125MBIT PAR 128TQFP | 98% | View |
| IDT71V25761S200PFI8 | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 100TQFP | 90% | View |
| 71V3558S100PFGI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 100TQFP | 74% | View |
| W948V6KBHX5E TR | Winbond Electronics | 256MB LPDDR, X16, 200MHZ T&R | 68% | View |
Submit your RFQ for AS4C8M16S-6TCN and get a quote within 24 hours.
3J LIMITED
