256MB LPDDR, X16, 200MHZ T&R
W948V6KBHX5E TR is a Memory manufactured by Winbond Electronics. 256MB LPDDR, X16, 200MHZ T&R. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 60-TFBGA.
In Stock: 2,945
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 256Mb (16M x 16) |
| Memory Interface | LVCMOS |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-VFBGA (8x9) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H128M32L2KQ-5 WT:B TR | Micron Technology Inc. | IC DRAM 4GBIT PARALLEL 168WFBGA | 100% | View |
| MT46H32M32LFCM-5 IT:A TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 90VFBGA | 100% | View |
| MT48H4M32LFB5-6 IT:K | Micron Technology Inc. | IC DRAM 128MBIT PARALLEL 90VFBGA | 92% | View |
| W9812G6JB-6I TR | Winbond Electronics | IC DRAM 128MBIT PARALLEL 54TFBGA | 83% | View |
| 70V3569S5BCI8 | Renesas Electronics America Inc | IC SRAM 576KBIT PAR 256CABGA | 81% | View |
| 71V3558S100PFGI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 100TQFP | 57% | View |
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