256MB LPDDR, X16, 200MHZ, INDUST
W948V6KBHX5I TR is a Memory manufactured by Winbond Electronics. 256MB LPDDR, X16, 200MHZ, INDUST. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 60-TFBGA.
In Stock: 2,276
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 256Mb (16M x 16) |
| Memory Interface | LVCMOS |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-VFBGA (8x9) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H32M32LFJG-5 IT:A | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 168VFBGA | 100% | View |
| MT46H128M16LFDD-48 AIT:C TR | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 60VFBGA | 98% | View |
| IS43LR16640C-5BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 60TFBGA | 98% | View |
| MT48H32M16LFB4-6 IT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 54VFBGA | 92% | View |
| IS43LR32320C-6BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 90TFBGA | 92% | View |
| 71V65803S100PFGI | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 100TQFP | 57% | View |
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