IC DRAM 1GBIT PARALLEL 60FBGA
AS4C64M16MD1-6BCNTR is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 1GBIT PARALLEL 60FBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 60-TFBGA.
In Stock: 1,315
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 1Gb (64M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-FBGA (8x10) |
AS4C64M16MD1-6BCNTR is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H8M16LFBF-6 AT:K TR | Micron Technology Inc. | IC DRAM 128MBIT PARALLEL 60VFBGA | 100% | View |
| MT46H128M32L2MC-6 IT:A | Micron Technology Inc. | IC DRAM 4GBIT PARALLEL 240WFBGA | 100% | View |
| MT48H32M16LFB4-6 AAT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 54VFBGA | 100% | View |
| MT46H16M32LFB5-6 AT:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 90VFBGA | 100% | View |
| W94AD2KBJX5E | Winbond Electronics | IC DRAM 1GBIT PARALLEL 90VFBGA | 92% | View |
| 70V3379S5BFI | Renesas Electronics America Inc | IC SRAM 576KBIT PAR 208CABGA | 81% | View |
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