IC DRAM 4GBIT PARALLEL 240WFBGA
MT46H128M32L2MC-6 IT:A is a Memory manufactured by Micron Technology Inc.. IC DRAM 4GBIT PARALLEL 240WFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 240-WFBGA.
In Stock: 4,435
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 4Gb (128M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 240-WFBGA |
| Supplier Device Package | 240-WFBGA (14x14) |
MT46H128M32L2MC-6 IT:A is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H8M16LFBF-6 AT:K TR | Micron Technology Inc. | IC DRAM 128MBIT PARALLEL 60VFBGA | 100% | View |
| MT48H32M16LFB4-6 AAT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 54VFBGA | 100% | View |
| MT46H16M32LFB5-6 AT:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 90VFBGA | 100% | View |
| 70V3569S5BFI8 | Renesas Electronics America Inc | IC SRAM 576KBIT PAR 208CABGA | 81% | View |
| 70V3379S5BFI | Renesas Electronics America Inc | IC SRAM 576KBIT PAR 208CABGA | 81% | View |
| 71V65803S100BGGI | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 119PBGA | 66% | View |
Submit your RFQ for MT46H128M32L2MC-6 IT:A and get a quote within 24 hours.
3J LIMITED
