IC DRAM 256MBIT PAR 66TSOP II
EM6AA160TSE-4IG is a Memory manufactured by Etron Technology, Inc.. IC DRAM 256MBIT PAR 66TSOP II. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.3V ~ 2.7V, package / case 66-TSSOP (0.400", 10.16mm Width).
In Stock: 7,811
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR |
| Memory Size | 256Mb (16M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 250 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 700 ps |
| Voltage - Supply | 2.3V ~ 2.7V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 66-TSSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 66-TSOP II |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| EM6A9160TSC-4IG | Etron Technology, Inc. | IC DRAM 128MBIT PAR 66TSOP II | 97% | View |
| IS43R16160F-5BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 60TFBGA | 91% | View |
| IS43R32800D-5BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 144LFBGA | 91% | View |
| AS4C4M16D1A-5TANTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | 91% | View |
| IS43R32160D-5BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 144LFBGA | 90% | View |
| MT46V32M16P-5B IT:J TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | 90% | View |
Submit your RFQ for EM6AA160TSE-4IG and get a quote within 24 hours.
3J LIMITED
