IC DRAM 64MBIT PAR 54TSOP II
AS4C4M16SA-5TCN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 64MBIT PAR 54TSOP II. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 3V ~ 3.6V, package / case 54-TSOP (0.400", 10.16mm Width).
In Stock: 9,817
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 64Mb (4M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 2ns |
| Access Time | 4.5 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| AS4C4M16SA-5TCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TSOP II | 100% | View |
| W9812G6KH-5I TR | Winbond Electronics | 128MB SDR SDRAM X16, 200MHZ, IND | 100% | View |
| EM639165BM-5H | Etron Technology, Inc. | IC DRAM 128MBIT PARALLEL 54FBGA | 82% | View |
| CYD01S18V-133BBI | Rochester Electronics, LLC | DUAL-PORT SRAM, 64KX18, 4NS | 71% | View |
| CYD02S18V-133BBC | Rochester Electronics, LLC | DUAL-PORT SRAM, 128KX18 | 71% | View |
| CYD02S18V-133BBI | Rochester Electronics, LLC | DUAL-PORT SRAM, 128KX18 | 71% | View |
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