DUAL-PORT SRAM, 64KX18, 4NS
CYD01S18V-133BBI is a Memory manufactured by Rochester Electronics, LLC. DUAL-PORT SRAM, 64KX18, 4NS. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.9V, package / case 256-LBGA.
In Stock: 85
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Standard |
| Memory Size | 1Mb (64K x 18) |
| Memory Interface | Parallel |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 4.7 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 256-LBGA |
| Supplier Device Package | 256-FBGA (17x17) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| CYD02S18V-133BBI | Rochester Electronics, LLC | DUAL-PORT SRAM, 128KX18 | 100% | View |
| MT46H8M16LFBF-6 AT:K | Micron Technology Inc. | IC DRAM 128MBIT PARALLEL 60VFBGA | 88% | View |
| MT48H8M16LFB4-6 IT:K | Micron Technology Inc. | IC DRAM 128MBIT PARALLEL 54VFBGA | 88% | View |
| IS43LR16640C-6BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 60TFBGA | 88% | View |
| MT46H64M16LFBF-5 IT:B | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 60VFBGA | 79% | View |
| W9812G6KH-5I TR | Winbond Electronics | 128MB SDR SDRAM X16, 200MHZ, IND | 71% | View |
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