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ALD1110EPAL - Advanced Linear Devices Inc. - Transistors - FETs, MOSFETs - Arrays

ALD1110EPAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10V 8DIP

ALD1110EPAL is a Transistors - FETs, MOSFETs - Arrays manufactured by Advanced Linear Devices Inc.. MOSFET 2N-CH 10V 8DIP. Key specifications: mounting type Through Hole, operating temperature 0°C ~ 70°C (TJ), package / case 8-DIP (0.300", 7.62mm), power - max 600mW.

In Stock: 5,287

Product Attributes

AttributeValue
Product StatusActive
FET Type2 N-Channel (Dual) Matched Pair
FET FeatureStandard
Drain to Source Voltage (Vdss)10V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs500Ohm @ 5V
Vgs(th) (Max) @ Id1.01V @ 1µA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds2.5pF @ 5V
Power - Max600mW
Operating Temperature0°C ~ 70°C (TJ)
Mounting TypeThrough Hole
Package / Case8-DIP (0.300", 7.62mm)
Supplier Device Package8-PDIP

Frequently Asked Questions

ALD1110EPAL is a Transistors - FETs, MOSFETs - Arrays manufactured by Advanced Linear Devices Inc.. MOSFET 2N-CH 10V 8DIP

The mounting type of ALD1110EPAL is Through Hole.

The operating temperature range of ALD1110EPAL is 0°C ~ 70°C (TJ).

The package type of ALD1110EPAL is 8-DIP (0.300", 7.62mm).

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