IC DRAM 16GBIT PAR 200TFBGA
MT53E512M32D1ZW-046 AAT:B TR is a Memory manufactured by Micron Technology Inc.. IC DRAM 16GBIT PAR 200TFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 105°C (TC), voltage - supply 1.06V ~ 1.17V, package / case 200-TFBGA.
In Stock: 9,660
| Attribute | Value |
|---|---|
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 16Gbit |
| Memory Organization | 512M x 32 |
| Memory Interface | Parallel |
| Clock Frequency | 2.133 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Grade | Automotive |
| Qualification | AEC-Q100 |
| Mounting Type | Surface Mount |
| Package / Case | 200-TFBGA |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT53E2G32D4DE-046 AAT:A TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | 100% | View |
| MT53E768M64D4HJ-046 AAT:A TR | Micron Technology Inc. | IC DRAM 48GBIT PAR 556WFBGA | 100% | View |
| MT53E1G16D1ZW-046 AAT:C TR | Micron Technology Inc. | IC DRAM 16GBIT PAR 200TFBGA | 100% | View |
| MT53E1G16D1ZW-046 AAT:C | Micron Technology Inc. | IC DRAM 16GBIT PAR 200TFBGA | 100% | View |
| W66CQ2NQUAGJ | Winbond Electronics | 4GB LPDDR4X, DDP, X32, 1866MHZ, | 94% | View |
| W66CQ2NQUAFJ TR | Winbond Electronics | 4GB LPDDR4X, DDP, X32, 1600MHZ, | 88% | View |
Submit your RFQ for MT53E512M32D1ZW-046 AAT:B TR and get a quote within 24 hours.
3J LIMITED
