IC DRAM 64GBIT PAR 200TFBGA
MT53E2G32D4DE-046 AAT:A TR is a Memory manufactured by Micron Technology Inc.. IC DRAM 64GBIT PAR 200TFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 105°C (TC), voltage - supply 1.06V ~ 1.17V, package / case 200-TFBGA.
In Stock: 1,698
| Attribute | Value |
|---|---|
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 64Gbit |
| Memory Organization | 2G x 32 |
| Memory Interface | Parallel |
| Clock Frequency | 2.133 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Grade | Automotive |
| Qualification | AEC-Q100 |
| Mounting Type | Surface Mount |
| Package / Case | 200-TFBGA |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W66CM2NQUAHJ | Winbond Electronics | 4GB LPDDR4X, DDP, X32, 2133MHZ, | 100% | View |
| MT53E1536M32D4DE-046 AAT:B | Micron Technology Inc. | IC DRAM 48GBIT PAR 200TFBGA | 100% | View |
| MT53E1G16D1ZW-046 AAT:C TR | Micron Technology Inc. | IC DRAM 16GBIT PAR 200TFBGA | 100% | View |
| W66BQ6NBUAGJ | Winbond Electronics | 2GB LPDDR4X, X16, 1866MHZ, -40C~ | 94% | View |
| W66BQ6NBUAGJ TR | Winbond Electronics | 2GB LPDDR4X, X16, 1866MHZ, -40C~ | 94% | View |
| W66CQ2NQUAGJ | Winbond Electronics | 4GB LPDDR4X, DDP, X32, 1866MHZ, | 94% | View |
Submit your RFQ for MT53E2G32D4DE-046 AAT:A TR and get a quote within 24 hours.
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