32 MBIT, 3.0V (2.7V TO 3.6V), -4
BY25Q32ESMIG(R) is a Memory manufactured by BYTe Semiconductor. 32 MBIT, 3.0V (2.7V TO 3.6V), -4. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 8-UFDFN Exposed Pad.
In Stock: 5,647
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 32Mbit |
| Memory Organization | 4M x 8 |
| Memory Interface | SPI - Quad I/O |
| Clock Frequency | 120 MHz |
| Write Cycle Time - Word, Page | 100µs, 2.4ms |
| Access Time | 7 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-UFDFN Exposed Pad |
| Supplier Device Package | 8-USON (2x3) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| GD25Q128ESIGR | GigaDevice Semiconductor (HK) Limited | 128MBIT NOR FLASH /3.3V /SOP8 20 | 92% | View |
| GD25Q40ET2GR | GigaDevice Semiconductor (HK) Limited | IC FLASH 4MBIT SPI/QUAD 8SOP | 92% | View |
| GD25B64EWIGY | GigaDevice Semiconductor (HK) Limited | IC FLASH 64MBIT SPI/QUAD 8WSON | 92% | View |
| BY25FQ32ELSIG(R) | BYTe Semiconductor | 32 MBIT, 1.8V (1.65V TO 1.95V), | 90% | View |
| W25M512JWFIQ | Winbond Electronics | SPIFLASH, 1.8V, 512M-BIT, 4KB UN | 71% | View |
| W25N512GVFIT | Winbond Electronics | 512MB SERIAL NAND FLASH, 3V | 68% | View |
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3J LIMITED
