32 MBIT, 1.8V (1.65V TO 1.95V),
BY25FQ32ELSIG(R) is a Memory manufactured by BYTe Semiconductor. 32 MBIT, 1.8V (1.65V TO 1.95V),. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.65V ~ 2V, package / case 8-SOIC (0.209", 5.30mm Width).
In Stock: 9,559
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 32Mbit |
| Memory Organization | 4M x 8 |
| Memory Interface | SPI - Quad I/O, QPI |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | 100µs, 1.5ms |
| Access Time | 7 ns |
| Voltage - Supply | 1.65V ~ 2V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.209", 5.30mm Width) |
| Supplier Device Package | 8-SOP |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| EM008LXQBDH13IS1T | Everspin Technologies Inc. | IC RAM 8MB XSPI/QUAD 8DFN | 100% | View |
| EM008LXQBB313IS2T | Everspin Technologies Inc. | IC RAM 8MBIT XSPI 24TBGA | 100% | View |
| GD25Q40ET2GR | GigaDevice Semiconductor (HK) Limited | IC FLASH 4MBIT SPI/QUAD 8SOP | 91% | View |
| BY25Q32ESMIG(R) | BYTe Semiconductor | 32 MBIT, 3.0V (2.7V TO 3.6V), -4 | 90% | View |
| GD25Q64ESIGY | GigaDevice Semiconductor (HK) Limited | IC FLASH 64MBIT SPI/QUAD 8SOP | 90% | View |
| W25N512GVFIT | Winbond Electronics | 512MB SERIAL NAND FLASH, 3V | 67% | View |
Submit your RFQ for BY25FQ32ELSIG(R) and get a quote within 24 hours.
3J LIMITED
