BY25FQM512ESWIG(R)
511 MBIT, 3.0V (2.7V TO 3.6V), -
BY25FQM512ESWIG(R) is a Memory manufactured by BYTe Semiconductor. 511 MBIT, 3.0V (2.7V TO 3.6V), -. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 8-WDFN Exposed Pad.
In Stock: 1,651