512 MBIT, 3.0V (2.7V TO 3.6V), -
BY25FQM512ESEIG(R) is a Memory manufactured by BYTe Semiconductor. 512 MBIT, 3.0V (2.7V TO 3.6V), -. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 8-WDFN Exposed Pad.
In Stock: 9,984
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8 |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 100µs, 2.4ms |
| Access Time | 5 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-WSON (8x6) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| BY25FQ256ESSIG(R) | BYTe Semiconductor | 256 MBIT, 3.0V (2.7V TO 3.6V), 1 | 100% | View |
| BY25FQM512ESWIG(R) | BYTe Semiconductor | 511 MBIT, 3.0V (2.7V TO 3.6V), - | 100% | View |
| GD25LB256EYJGR | GigaDevice Semiconductor (HK) Limited | IC FLASH 256MBIT SPI/QUAD | 91% | View |
| BY25FQ64ESWIG(R) | BYTe Semiconductor | 64 MBIT, 3.0V (2.7V TO 3.6V), -4 | 88% | View |
| MX25UM25345GBEI00 | Macronix | IC FLASH 256MBIT SPI/OCT 49WLCSP | 81% | View |
| MT25QL128ABB1ESE-0AUT | Micron Technology Inc. | ICSRLFL 128M 3V 8SOIC AUTO UT | 73% | View |
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