| Mfr Part # | Qty | Price | Product Status | Transistor Type | Frequency | Gain | Voltage - Test | Current Rating (Amps) | Noise Figure | Current - Test | Power - Output | Voltage - Rated | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BLC9G20LS-120VZ
RF FET LDMOS 65V 19.2DB SOT12753
Ampleon USA Inc.
|
52 | 61.10000 | Last Time Buy | LDMOS | 1.81GHz ~ 1.88GHz | 19.2dB | 28 V | - | - | 700 mA | 120W | 65 V | SOT-1275-3 | SOT-1275-3 | Details |
|
BLF573S,112
RF FET LDMOS 110V 27.2DB SOT502B
Ampleon USA Inc.
|
5,617 | 123.45000 | Active | LDMOS | 225MHz | 27.2dB | 50 V | 42A | - | 900 mA | 300W | 110 V | SOT-502B | SOT502B | Details |
|
PTFC261402FC-V1-R250
IC AMP RF LDMOS
Wolfspeed, Inc.
|
9,855 | 86.56200 | Active | LDMOS | 2.69GHz | 18dB | 28 V | - | - | 900 mA | 28W | 65 V | - | - | Details |
|
ARF476FL
RF FET N CH 500V 10A PSH PUL PR
Microchip Technology
|
6 | 164.36000 | Active | 2 N-Channel (Dual) Common Source | 128MHz | 16dB | 150 V | 10A | - | 15 mA | 900W | 500 V | - | - | Details |
|
SD4933MR
TRANSISTOR RF MOSFET N-CH M177
STMicroelectronics
|
3,774 | 158.81000 | Active | N-Channel | 30MHz | 24dB | 50 V | 40A | - | 250 mA | 300W | 200 V | M177 | M177 | Details |
|
CGH60015D-GP4
RF MOSFET HEMT 28V DIE
Wolfspeed, Inc.
|
130 | 56.99400 | Not For New Designs | HEMT | 6GHz | 15dB | 28 V | - | - | 200 mA | 15W | 84 V | Die | Die | Details |
|
BLF2324M8LS200PJ
RF FET LDMOS 65V 17.2DB SOT539B
Ampleon USA Inc.
|
7,922 | 144.36000 | Active | LDMOS (Dual), Common Source | 2.3GHz ~ 2.4GHz | 17.2dB | 28 V | - | - | 1.74 A | 60W | 65 V | SOT-539B | SOT539B | Details |
|
BLA9H0912LS-700GU
BLA9H0912LS-700G/SOT502/TRAY
Ampleon USA Inc.
|
37 | 363.51000 | Active | LDMOS | 960MHz ~ 1.215GHz | 20dB | 50 V | 2.8µA | - | 100 mA | 700W | 106 V | SOT-502E | CDFM2 | Details |
|
CPH5608-TL-E
NCH+NCH 2.5V DRIVE SERIES
onsemi
|
48,000 | 0.17000 | Active | - | - | - | - | - | - | - | - | - | - | - | Details |
|
FSS173-TL-E
PCH 4V DRIVE SERIES
onsemi
|
78,000 | 0.43000 | Active | - | - | - | - | - | - | - | - | - | - | - | Details |
|
BLC2425M10LS250Z
BLC2425M10LS250/SOT1273/TRAYDP
Ampleon USA Inc.
|
87 | 88.29000 | Active | LDMOS | 2.4GHz ~ 2.5GHz | 14.4dB | 32 V | 2.8µA | - | 100 mA | 250W | 65 V | SOT-1270-1 | SOT-1270-1 | Details |
|
BLM8G0710S-45ABY
RF FET LDMOS 65V 35DB SOT12112
Ampleon USA Inc.
|
33 | 40.26000 | Last Time Buy | LDMOS (Dual) | 957.5MHz | 35dB | 28 V | - | - | 30 mA | 3W | 65 V | SOT-1211-2 | 16-HSOPF | Details |
|
FW4604-TL-2WX
NCH+PCH 4.5V DRIVE SERIES
onsemi
|
520,000 | 0.32000 | Active | - | - | - | - | - | - | - | - | - | - | - | Details |
|
MCH3319-TL-E
PCH 1.8V DRIVE SERIES
onsemi
|
240,000 | 0.10000 | Active | - | - | - | - | - | - | - | - | - | - | - | Details |
|
BF1100WR,115
MOSFET N-CH 14V 30MA SOT343R
NXP USA Inc.
|
66,000 | 0.18000 | Obsolete | N-Channel Dual Gate | 800MHz | - | 9 V | 30mA | 2dB | 10 mA | - | 14 V | SC-82A, SOT-343 | CMPAK-4 | Details |
|
BLM9D2327-26BZ
BLM9D2327-26B/SOT1462/REELDP
Ampleon USA Inc.
|
495 | 19.72000 | Active | LDMOS | 2.3GHz ~ 2.7GHz | 27dB | 28 V | 1.4µA | - | 76 mA | 44.9dBm | 28 V | 20-QFN Exposed Pad | 20-PQFN (8x8) | Details |
|
BLP05H6110XRY
RF FET LDMOS 135V 27DB SOT1223-2
Ampleon USA Inc.
|
2,403 | 34.17000 | Active | LDMOS (Dual), Common Source | 108MHz | 27dB | 50 V | - | - | 20 mA | 110W | 135 V | SOT-1223-2 | 4-HSOPF | Details |
|
BLF8G38LS-75VJ
RF FET LDMOS 65V 15.5DB SOT1239B
Ampleon USA Inc.
|
33 | 71.10000 | Last Time Buy | LDMOS | 3.4GHz ~ 3.6GHz | 15.5dB | 30 V | - | - | 600 mA | 20W | 65 V | SOT-1239B | CDFM6 | Details |
|
MRFE6VS25NR1
FET RF 133V 512MHZ TO270-2
NXP USA Inc.
|
1,790 | 36.63000 | Active | LDMOS | 512MHz | 25.4dB | 50 V | - | - | 10 mA | 25W | 133 V | TO-270AA | TO-270-2 | Details |
|
BLA9H0912L-700U
BLA9H0912L-700/SOT502/TRAY
Ampleon USA Inc.
|
68 | 363.51000 | Active | LDMOS | 960MHz ~ 1.215GHz | 20dB | 50 V | 2.8µA | - | 100 mA | 700W | 106 V | SOT-502A | SOT502A | Details |
|
MWT-PH32F
TRANS ALGAAS/INGAAS PHEMT
Microwave Technology Inc.
|
100 | 28.95000 | Active | pHEMT FET | 12GHz | 13dB | 2 V | 360mA | - | 1 mA | 30.5dB | - | Die | Chip | Details |
|
NE3511S02-T1C-A
SMALL SIGNAL N-CHANNEL MOSFET
Renesas Electronics America Inc
|
1,242 | 0.77000 | Obsolete | HFET | 12GHz | 13.5dB | 2 V | 70mA | 0.3dB | 10 mA | - | 4 V | 4-SMD, Flat Leads | S02 | Details |
|
BLD6G22LS-50,112
RF TRANSISTOR
NXP USA Inc.
|
30 | 90.08000 | Obsolete | LDMOS (Dual), Common Source | 2.14GHz | 14dB | 28 V | 10.2A | - | 170 mA | 8W | 65 V | SOT-1130B | CDFM4 | Details |
|
BLL6H1214P2S-250Z
RF FET LDMOS 50V 27DB MODULE
Ampleon USA Inc.
|
1,086 | 525.00000 | Not For New Designs | LDMOS (Dual) | 1.2GHz ~ 1.4GHz | 27dB | 45 V | - | - | 200 mA | 53dBm | 50 V | Module | Module | Details |
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