Transistors - Bipolar (BJT) - Single, Pre-Biased

Mfr Part #	Qty	Price	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
RN1113,LXHF(CT AUTO AEC-Q NPN Q1BSR=47K, VCEO=5 Toshiba Semiconductor and Storage	2,810	0.34000	Active	NPN - Pre-Biased	100 mA	50 V	47 kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250 MHz	100 mW	Surface Mount	SC-75, SOT-416	SSM	Details
DTC144TCA-TP TRANS PREBIAS NPN 200MW SOT23 Micro Commercial Co	4,417	0.04880	Active	NPN - Pre-Biased	100 mA	50 V	47 kOhms	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	Details
NTE2357 T-NPN SI W/22K RESISTOR NTE Electronics, Inc	284	1.26000	Active	NPN - Pre-Biased	100 mA	50 V	22 kOhms	22 kOhms	50 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	300 mW	Through Hole	TO-226-3, TO-92-3 Short Body	TO-92S	Details
DTC143ZUA-HF TRANS PREBIAS NPN 200MW SOT-323 Comchip Technology	3,173	0.06140	Active	NPN - Pre-Biased + Diode	100 mA	-	4.7 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	SOT-323	Details
RN1410,LXHF AUTO AEC-Q NPN Q1BSR=4.7K, VCEO= Toshiba Semiconductor and Storage	2,851	0.35000	Active	NPN - Pre-Biased	100 mA	50 V	4.7 kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini	Details
SMMUN2113LT1G TRANS PREBIAS PNP 50V SOT23-3 onsemi	2,000	0.33000	Active	PNP - Pre-Biased	100 mA	50 V	47 kOhms	47 kOhms	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	246 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)	Details
MUN2136T1G TRANS PREBIAS PNP 230MW SC59 onsemi	2,100	0.25000	Active	PNP - Pre-Biased	100 mA	50 V	100 kOhms	100 kOhms	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	230 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59	Details
MUN2137T1G TRANS PREBIAS PNP 230MW SC59 onsemi	4,571	0.02460	Active	PNP - Pre-Biased	100 mA	50 V	47 kOhms	22 kOhms	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	230 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59	Details
PDTC123JQBZ PDTC123JQB/SOT8015/DFN1110D-3 Nexperia USA Inc.	5,000	0.27000	Obsolete	PNP - Pre-Biased	100 mA	50 V	2.2 kOhms	47 kOhms	100 @ 10mA, 5V	100mV @ 250µA, 5mA	100nA	180 MHz	340 mW	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1110D-3	Details
RN2107MFV,L3XHF(CT AUTO AEC-Q PNP Q1BSR=10K, Q1BER= Toshiba Semiconductor and Storage	1,407	0.35000	Active	PNP - Pre-Biased	100 mA	50 V	10 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	-	150 mW	Surface Mount	SOT-723	VESM	Details
FJN3306RTA SMALL SIGNAL BIPOLAR TRANSISTOR Fairchild Semiconductor	35,000	0.02000	Obsolete	NPN - Pre-Biased	100 mA	50 V	10 kOhms	47 kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	250 MHz	300 mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92-3	Details
DDTA113TCA-7 TRANS PREBIAS PNP 200MW SOT23-3 Diodes Incorporated	3,000	0.06910	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	Details
MMBTRC103SS DIGITAL TR SOT-23 50V 100MA Diotec Semiconductor	3,000	0.02950	Active	NPN - Pre-Biased	100 mA	50 V	22 kOhms	22 kOhms	70 @ 10mA, 5V	-	500nA	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)	Details
UNR9110G0L TRANS PREBIAS PNP 125MW SSMINI3 Panasonic Electronic Components	3,000	0.44000	Obsolete	PNP - Pre-Biased	100 mA	50 V	47 kOhms	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80 MHz	125 mW	Surface Mount	SC-89, SOT-490	SSMini3-F3	Details
BCR116WH6327XTSA1 TRANS PREBIAS NPN 250MW SOT323-3 Infineon Technologies	4,632	0.05500	Not For New Designs	NPN - Pre-Biased	100 mA	50 V	4.7 kOhms	47 kOhms	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	150 MHz	250 mW	Surface Mount	SC-70, SOT-323	PG-SOT323	Details
MUN2216T1G TRANS PREBIAS NPN 50V 100MA SC59 onsemi	15,000	0.05070	Active	NPN - Pre-Biased	100 mA	50 V	4.7 kOhms	-	160 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	338 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59	Details
NSBC113EF3T5G TRANS PREBIAS NPN 50V SOT1123 onsemi	320,000	0.04000	Active	NPN - Pre-Biased	100 mA	50 V	1 kOhms	1 kOhms	3 @ 5mA, 10V	250mV @ 5mA, 10mA	500nA	-	254 mW	Surface Mount	SOT-1123	SOT-1123	Details
RN1101,LXHF(CT AUTO AEC-Q SINGLE NPN Q1BSR=4.7K Toshiba Semiconductor and Storage	9,874	0.34000	Active	NPN - Pre-Biased	100 mA	50 V	4.7 kOhms	4.7 kOhms	30 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	100 mW	Surface Mount	SC-75, SOT-416	SSM	Details
NSBC123JF3T5G TRANS PREBIAS NPN 50V SOT1123 onsemi	405,497	0.08000	Active	NPN - Pre-Biased	100 mA	50 V	2.2 kOhms	47 kOhms	80 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	254 mW	Surface Mount	SOT-1123	SOT-1123	Details
DDTC114YLP-7 TRANS PREBIAS NPN 250MW 3DFN Diodes Incorporated	39	0.36000	Active	NPN - Pre-Biased	100 mA	50 V	10 kOhms	47 kOhms	180 @ 50mA, 5V	200mV @ 5mA, 50mA	500nA	250 MHz	250 mW	Surface Mount	3-UFDFN	X1-DFN1006-3	Details
NSVMMUN2230LT1G TRANS PREBIAS NPN 0.246W SOT23 onsemi	9,072	0.05050	Active	NPN - Pre-Biased	100 mA	50 V	1 kOhms	1 kOhms	3 @ 5mA, 10V	250mV @ 5mA, 10mA	500nA	-	246 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)	Details
PDTD123YQAZ NEXPERIA PDTD123 - 50 V, 500MA N NXP Semiconductors	24,000	0.03000	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	Details
RN2422TE85LF TRANS PREBIAS PNP 50V 0.8A SMINI Toshiba Semiconductor and Storage	2,469	0.09540	Active	PNP - Pre-Biased	800 mA	50 V	2.2 kOhms	2.2 kOhms	65 @ 100mA, 1V	250mV @ 1mA, 50mA	500nA	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini	Details
RN2405,LXHF AUTO AEC-Q SINGLE PNP Q1BSR=2.2K Toshiba Semiconductor and Storage	7,615	0.35000	Active	PNP - Pre-Biased	100 mA	50 V	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini	Details

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Transistors - Bipolar (BJT) - Single, Pre-Biased

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