| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NRVB1H100SFT3G
DIODE SCHOTTKY 100V 1A SOD123FL
onsemi
|
3,628 | 0.44000 | Active | Schottky | 100 V | 1A | 760 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 40 µA @ 100 V | - | Surface Mount | SOD-123F | SOD-123FL | -65°C ~ 175°C | Details |
|
MBR0530-F2-0000HF
DIODE SCHOTTKY 30V 500MA SOD123
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
9,399 | 0.22000 | Active | Schottky | 30 V | 500mA | 550 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | 40pF @ 4V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 125°C | Details |
|
S4M V7G
DIODE GEN PURP 1KV 4A DO214AB
Taiwan Semiconductor Corporation
|
16,988 | 0.78000 | Active | Standard | 1000 V | 4A | 1.15 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 1000 V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C | Details |
|
SVC12120VB_R2_00001
ULTRA LOW VF SCHOTTKY RECTIFIER
Panjit International Inc.
|
6,963 | 0.64000 | Active | Schottky | 120 V | 12A | 770 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277B | -55°C ~ 150°C | Details |
|
ESH2PB-M3/84A
DIODE GEN PURP 100V 2A DO220AA
Vishay General Semiconductor - Diodes Division
|
14 | 0.44000 | Active | Standard | 100 V | 2A | 980 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C | Details |
|
SS2040FL_R1_00001
SOD-123FL, SKY
Panjit International Inc.
|
3,565 | 0.43000 | Active | Schottky | 40 V | 2A | 500 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | Surface Mount | SOD-123F | SOD-123FL | -50°C ~ 150°C | Details |
|
V8PM15-M3/H
DIODE SCHOTTKY 8A 150V SMPC
Vishay General Semiconductor - Diodes Division
|
19,000 | 0.70000 | Active | Schottky | 150 V | 8A | 1.08 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 150 V | 460pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 175°C | Details |
|
JANTX1N5617/TR
RECTIFIER UFR,FRR
Microchip Technology
|
5,778 | 5.02500 | Active | Standard | 400 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C | Details |
|
MA3J7410GL
DIODE SCHOTTKY 30V 30MA SMINI3
Panasonic Electronic Components
|
2,955 | 0.47000 | Obsolete | Schottky | 30 V | 30mA (DC) | 1 V @ 30 mA | Small Signal =< 200mA (Io), Any Speed | 1 ns | 300 nA @ 30 V | - | Surface Mount | SC-85 | SMini3-F2 | 125°C (Max) | Details |
|
1N5282TR
RECTIFIER DIODE, 0.2A, 80V, DO-3
Fairchild Semiconductor
|
80,204 | 0.02000 | Active | Standard | 80 V | 200mA | 900 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 100 nA @ 55 V | 2.5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | 175°C (Max) | Details |
|
1N4933GP-TP
DIODE GPP FAST 1A DO-41
Micro Commercial Co
|
4,299 | 0.04400 | Active | Standard | 50 V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | - | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C | Details |
|
1N4148-1/TR
GLASS AXIAL SWITCHING DIODE
Microchip Technology
|
8,174 | 0.93000 | Active | Standard | 75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 20 ns | 500 nA @ 75 V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 175°C | Details |
|
F18107D1600
MODULE DIODE 105A 600VAC
Sensata-Crydom
|
1,832 | 159.64300 | Not For New Designs | Standard | 600 V | - | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | Module | Module | - | Details |
|
VS-8EVH06-M3/I
DIODE GEN PURPOSE 600V SLIMDPAK
Vishay General Semiconductor - Diodes Division
|
393 | 0.97000 | Active | Standard | 600 V | 8A | 2.4 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 20 µA @ 600 V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SlimDPAK | -55°C ~ 175°C | Details |
|
SS2200B
SCHOTTKY DIODE SMB 200V 2A
MDD
|
36,000 | 0.25850 | Active | Schottky | 200 V | 2A | 950 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 200 V | 180pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C | Details |
|
VS-SD400C08C
DIODE GEN PURP 800V 800A DO200AA
Vishay General Semiconductor - Diodes Division
|
8,255 | 52.70750 | Active | Standard | 800 V | 800A | 1.86 V @ 1930 A | Standard Recovery >500ns, > 200mA (Io) | - | 15 mA @ 800 V | - | Clamp On | DO-200AA, A-PUK | DO-200AA, A-PUK | - | Details |
|
NTE573-1
R-SCHOTTKY BARRIER 100V5A
NTE Electronics, Inc
|
3,508 | 1.31000 | Active | Schottky | 100 V | 5A | 850 mV @ 5 A | Standard Recovery >500ns, > 200mA (Io) | - | 500 µA @ 100 V | 380pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C | Details |
|
BAS70LT1
DIODE SCHOTTKY 70V SOT23
onsemi
|
573,665 | 0.09000 | Obsolete | Schottky | 70 V | 70mA (DC) | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 µA @ 70 V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | - | Details |
|
SDT8A120P5-7
DIODE SCHOTTKY 120V 8A POWERDI 5
Diodes Incorporated
|
6,837 | 0.27510 | Active | Schottky | 120 V | 8A | 840 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 120 V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | - | Details |
|
NSR05F30NXT5G
DIODE SCHOTTKY 30V 500MA 2DSN
onsemi
|
158 | 0.49000 | Active | Schottky | 30 V | 500mA (DC) | 430 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 75 µA @ 30 V | - | Surface Mount | 0402 (1006 Metric) | 2-DSN (1x0.6), (0402) | 150°C (Max) | Details |
|
JAN1N1188
DIODE GEN PURP 400V 35A DO5
Microchip Technology
|
8,810 | 55.41000 | Active | Standard | 400 V | 35A | 1.4 V @ 110 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C | Details |
|
SBL5100
DIODE SCHOTTKY 100V DO201AD
SMC Diode Solutions
|
1,244 | 0.47000 | Active | Schottky | 100 V | - | 850 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C | Details |
|
USB260-M3/52T
DIODE GEN PURP 600V 2A DO214AA
Vishay General Semiconductor - Diodes Division
|
754 | 0.56000 | Active | Standard | 600 V | 2A | 1.6 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 600 V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C | Details |
|
SR1040
DIODE SCHOTTKY 40V 10A TO220AB
Taiwan Semiconductor Corporation
|
4,545 | 0.49470 | Active | Schottky | 40 V | 10A | 550 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 125°C | Details |
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