| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SS36FA
DIODE SCHOTTKY 60V 3A SOD123FA
onsemi
|
24,187 | 0.53000 | Active | Schottky | 60 V | 3A | 750 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | 170pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123FA | -55°C ~ 150°C | Details |
|
SBA240AH-AU_R1_000A1
SOD-123HE, SKY
Panjit International Inc.
|
4,295 | 0.45000 | Active | Schottky | 40 V | 2A | 530 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C | Details |
|
S1A-13-F
DIODE GEN PURP 50V 1A SMA
Diodes Incorporated
|
513,503 | 0.27000 | Active | Standard | 50 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 5 µA @ 50 V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C | Details |
|
MURS360HE3_A/H
DIODE GEN PURP 600V 3A DO214AB
Vishay General Semiconductor - Diodes Division
|
2,458 | 0.31280 | Active | Standard | 600 V | 3A | 1.28 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 3 V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C | Details |
|
AS3PJ-M3/86A
DIODE AVALANCHE 600V 2.1A TO277A
Vishay General Semiconductor - Diodes Division
|
4,860 | 0.28710 | Active | Avalanche | 600 V | 2.1A (DC) | 920 mV @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | 1.2 µs | 10 µA @ 600 V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C | Details |
|
ES1F
DIODE GEN PURP 300V 1A SMA
onsemi
|
50,989 | 0.38000 | Active | Standard | 300 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 300 V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | 150°C (Max) | Details |
|
NTE5921
R-400PRV 20A ANODE CASE
NTE Electronics, Inc
|
64 | 12.73000 | Active | Standard | 400 V | 20A | 1.23 V @ 63 A | Standard Recovery >500ns, > 200mA (Io) | - | 12 mA @ 400 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C | Details |
|
SBYV28-100-E3/54
DIODE GEN PURP 100V 3.5A DO201AD
Vishay General Semiconductor - Diodes Division
|
1,273 | 0.69000 | Active | Standard | 100 V | 3.5A | 1.1 V @ 3.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 5 µA @ 100 V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C | Details |
|
VT3080S-M3/4W
DIODE SCHOTTKY 30A 80V TO-220AB
Vishay General Semiconductor - Diodes Division
|
5,239 | 0.68900 | Active | Schottky | 80 V | 30A | 950 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 80 V | - | Through Hole | TO-220-3 | TO-220-3 | -55°C ~ 150°C | Details |
|
1N1192RA
20 AMP SILICON RECTIFIER DO-5
Solid State Inc.
|
8,307 | 2.50000 | Active | Standard, Reverse Polarity | - | 12A | 1.2 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C | Details |
|
UF1010G_R2_00001
GLASS PASSIVATED JUNCTION ULTRAF
Panjit International Inc.
|
4,997 | 0.34000 | Active | Standard | 1000 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 1 µA @ 1000 V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C | Details |
|
S2MA
DIODE GEN PURP 1.5A DO214AC
Taiwan Semiconductor Corporation
|
2,559 | 0.06760 | Active | Standard | - | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 1000 V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C | Details |
|
SBR3U40S1FQ-7
DIODE SBR 40V 3A SOD123F
Diodes Incorporated
|
1,617 | 0.13340 | Active | Super Barrier | 40 V | 3A | 490 mV @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 180 µA @ 40 V | - | Surface Mount | SOD-123F | SOD-123F | -65°C ~ 150°C | Details |
|
JANTX1N6621US
DIODE GEN PURP 440V 2A D5A
Microchip Technology
|
7,738 | 13.77000 | Active | Standard | 440 V | 2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 440 V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C | Details |
|
SL43-M3/57T
DIODE SCHOTTKY 4A 30V DO-214AB
Vishay General Semiconductor - Diodes Division
|
5,069 | 0.88000 | Active | Schottky | 30 V | 4A | 420 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C | Details |
|
UFS380J/TR13
DIODE GEN PURP 800V 3A DO214AB
Microchip Technology
|
2,230 | 2.50500 | Active | Standard | 800 V | 3A | 1.2 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 800 V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C | Details |
|
BAT721,215
DIODE SCHOTTKY 40V 200MA TO236AB
Nexperia USA Inc.
|
11,467 | 0.47000 | Active | Schottky | 40 V | 200mA (DC) | 550 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 15 µA @ 30 V | 50pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB | 125°C (Max) | Details |
|
UG1C-M3/54
DIODE GEN PURP 150V 1A DO204AL
Vishay General Semiconductor - Diodes Division
|
6,137 | 0.09970 | Active | Standard | 150 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 5 µA @ 150 V | 7pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C | Details |
|
SD101AW
SchottkyD, 60V, 0.015A
Diotec Semiconductor
|
9,023 | 0.19730 | Active | Schottky | 60 V | 15mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | 1 ns | 200 nA @ 50 V | 2pF @ 0V, 1MHz | Surface Mount | SOD-123F | SOD-123F | -55°C ~ 125°C | Details |
|
VS-30ETH06S-M3
DIODE ULTRA FAST 600V 30A D2PAK
Vishay General Semiconductor - Diodes Division
|
3,018 | 1.80000 | Active | Standard | 600 V | 30A | 2.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 50 µA @ 600 V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 175°C | Details |
|
BYT52G-TR
DIODE AVALANCHE 400V 1.4A SOD57
Vishay General Semiconductor - Diodes Division
|
3,196 | 0.27720 | Active | Avalanche | 400 V | 1.4A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 400 V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C | Details |
|
SK26-LTP
DIODE SCHOTTKY 60V 2A DO214AA
Micro Commercial Co
|
8,406 | 0.08800 | Active | Schottky | 60 V | 2A | 700 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 60 V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA, HSMB | -55°C ~ 125°C | Details |
|
RS2A-M3/52T
DIODE GEN PURP 50V 1.5A DO214AA
Vishay General Semiconductor - Diodes Division
|
7,400 | 0.11420 | Active | Standard | 50 V | 1.5A | 1.3 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 50 V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C | Details |
|
16F10
16 AMP SILCON RECTIFIER DO4 KK
Solid State Inc.
|
4,387 | 1.66700 | Active | Standard | 100 V | 16A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | - | Details |
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