| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
V2FM10HM3/H
2A,100V,SMF,TRENCH SKY RECT.
Vishay General Semiconductor - Diodes Division
|
7,880 | 0.45000 | Active | Schottky | 100 V | 2A | 830 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 55 µA @ 100 V | 150pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -40°C ~ 175°C | Details |
|
SS1FL4-M3/I
DIODE SCHOTTKY 40V 1A DO-219AB
Vishay General Semiconductor - Diodes Division
|
2,818 | 0.09590 | Active | Schottky | 40 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | 115pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C | Details |
|
SB40-05J
RECTIFIER DIODE, SCHOTTKY
onsemi
|
12,703 | 0.57000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
SUF4006
DIODE UFR MELF 800V 1A
Diotec Semiconductor
|
30,000 | 0.07720 | Active | Standard | 800 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 800 V | - | Surface Mount | DO-213AB, MELF | MELF DO-213AB | -50°C ~ 175°C | Details |
|
VS-20L15TSTRR-M3
DIODE SCHOTTKY 15V 20A TO263
Vishay General Semiconductor - Diodes Division
|
5,515 | 1.02870 | Active | Schottky | 15 V | 20A | 410 mV @ 19 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 mA @ 15 V | 2000pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 125°C | Details |
|
HER205G-TP
DIODE GPP HE 2A DO-15
Micro Commercial Co
|
9,056 | 0.06600 | Active | Standard | 400 V | 2A | - | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | - | 50pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C | Details |
|
BAS283-GS18
DIODE SCHOTTKY 60V 30MA SOD80
Vishay General Semiconductor - Diodes Division
|
5,726 | 0.06130 | Active | Schottky | 60 V | 30mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 200 V | 1.6pF @ 1V, 1MHz | Surface Mount | SOD-80 Variant | SOD-80 QuadroMELF | 125°C (Max) | Details |
|
MBRM120ET3G
DIODE SCHOTTKY 20V 1A POWERMITE
onsemi
|
31,233 | 0.64000 | Active | Schottky | 20 V | 1A | 530 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 20 V | - | Surface Mount | DO-216AA | Powermite | -65°C ~ 150°C | Details |
|
CD214C-S3D
DIO RECT VRRM 200V 3A SMC
Bourns Inc.
|
8,834 | 0.15150 | Active | Standard | 200 V | 3A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | - | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C | Details |
|
JANTX1N6075/TR
RECTIFIER UFR,FRR
Microchip Technology
|
4,657 | 17.26500 | Active | Standard | 150 V | 850mA | 2.04 V @ 9.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 150 V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C | Details |
|
SM5063-CT
CUT-TAPE VERSION. STANDARD RECO
Diotec Semiconductor
|
4,639 | 0.40700 | Active | Standard | 1000 V | 2A | 1.1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 1 kV | - | Surface Mount | DO-213AB, MELF | MELF DO-213AB | -50°C ~ 175°C | Details |
|
S16GSD2-CT
CUT-TAPE VERSION. STANDARD RECO
Diotec Semiconductor
|
7,981 | 3.06230 | Active | Standard | 400 V | - | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 400 V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -50°C ~ 150°C | Details |
|
CMR1U-10M TR13 PBFREE
DIODE GEN PURP 1KV 1A SMA
Central Semiconductor Corp
|
35,358 | 1.16000 | Active | Standard | 1000 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 5 µA @ 1000 V | - | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 175°C | Details |
|
AS3PJ-M3/87A
DIODE AVALANCHE 600V 2.1A TO277A
Vishay General Semiconductor - Diodes Division
|
4,650 | 0.28710 | Active | Avalanche | 600 V | 2.1A (DC) | 920 mV @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | 1.2 µs | 10 µA @ 600 V | 37pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C | Details |
|
MBRF1045
DIODE SCHOTTKY 45V ITO220AC
SMC Diode Solutions
|
274 | 0.71000 | Active | Schottky | 45 V | - | 650 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 45 V | 400pF @ 5V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C | Details |
|
SK12-TP
DIODE SCHOTTKY 20V 1A DO214AA
Micro Commercial Co
|
9,793 | 0.06600 | Discontinued at Digi-Key | Schottky | 20 V | 1A | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 20 V | - | Surface Mount | DO-214AA, SMB | DO-214AA, HSMB | -55°C ~ 125°C | Details |
|
VS-ETL1506FP-M3
DIODE GEN PURP 600V 15A TO220FP
Vishay General Semiconductor - Diodes Division
|
630 | 1.58000 | Active | Standard | 600 V | 15A | 1.07 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 210 ns | 15 µA @ 600 V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C | Details |
|
BR220_R1_00001
SMA, SKY
Panjit International Inc.
|
4,645 | 0.43000 | Active | Schottky | 200 V | 2A | 900 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 200 V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 150°C | Details |
|
RS1PBHM3_A/I
DIODE 100V 1A DO-220AA
Vishay General Semiconductor - Diodes Division
|
7,651 | 0.10020 | Active | Standard | 100 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 100 V | 9pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C | Details |
|
SS1H6LS RVG
DIODE SCHOTTKY 60V 1A SOD123HE
Taiwan Semiconductor Corporation
|
2,937 | 0.50000 | Active | Schottky | 60 V | 1A | 700 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 µA @ 60 V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C | Details |
|
BYW34-TR
DIODE AVALANCHE 400V 2A SOD57
Vishay General Semiconductor - Diodes Division
|
3,374 | 0.27720 | Active | Avalanche | 400 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 400 V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C | Details |
|
PMEG45T10EXD-QX
PMEG45T10EXD-Q/SOD323HP/SO2
Nexperia USA Inc.
|
9,740 | 0.41000 | Active | Schottky | 45 V | 1A | 520 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 8 ns | 20 µA @ 45 V | 130pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | SOD323HP | 175°C | Details |
|
JANS1N5809
DIODE GEN PURP 100V 3A AXIAL
Microchip Technology
|
320 | 47.18000 | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C | Details |
|
JAN1N6628US
DIODE GEN PURP 660V 1.75A D5B
Microchip Technology
|
1,987 | 18.45000 | Active | Standard | 660 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 660 V | 40pF @ 10V, 1MHz | Surface Mount | E-MELF | D-5B | -65°C ~ 150°C | Details |
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