| Mfr Part # | Qty | Price | Product Status | Diode Configuration | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Mounting Type | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SB3020CT_T0_00001
SCHOTTKY BARRIER RECTIFIERS
Panjit International Inc.
|
8,115 | 1.06000 | Active | 1 Pair Common Cathode | Schottky | 20 V | 30A | 550 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 20 V | -55°C ~ 125°C | Through Hole | TO-220-3 | TO-220AB | Details |
|
BYV32-100-E3/45
DIODE ARRAY GP 100V 18A TO220AB
Vishay General Semiconductor - Diodes Division
|
733 | 1.80000 | Active | 1 Pair Common Cathode | Standard | 100 V | 18A | 1.15 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 100 V | -65°C ~ 150°C | Through Hole | TO-220-3 | TO-220-3 | Details |
|
12CWQ15FN
DIODE ARRAY SCHOTTKY 150V DPAK
SMC Diode Solutions
|
791 | 0.73000 | Active | 1 Pair Common Cathode | Schottky | 150 V | - | 890 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 150 V | -55°C ~ 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Details |
|
VS-12CTQ035-M3
DIODE ARRAY SCHOTTKY 35V TO220-3
Vishay General Semiconductor - Diodes Division
|
3,168 | 0.55540 | Active | 1 Pair Common Cathode | Schottky | 35 V | 6A | 730 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800 µA @ 35 V | -55°C ~ 175°C | Through Hole | TO-220-3 | TO-220-3 | Details |
|
BAS70TW-TP
DIODE ARRAY SCHOTTKY 70V SOT363
Micro Commercial Co
|
35,798 | 0.51000 | Active | 3 Independent | Schottky | 70 V | 70mA (DC) | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 100 nA @ 50 V | -55°C ~ 125°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Details |
|
MSD6100RLRA
DIODE ARRAY GP 100V 200MA TO92-3
onsemi
|
82,000 | 0.04000 | Obsolete | 1 Pair Common Cathode | Standard | 100 V | 200mA (DC) | 1.1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 5 µA @ 100 V | -55°C ~ 135°C | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-92 (TO-226) | Details |
|
GSXD120A008S1-D3
DIODE SCHOTTKY 80V 120A SOT227
SemiQ
|
9,901 | 37.05750 | Active | 2 Independent | Schottky | 80 V | 120A | 840 mV @ 120 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 80 V | -40°C ~ 150°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Details |
|
VB20M120C-E3/4W
DIODE SCHOTTKY 20A 120V TO-263AB
Vishay General Semiconductor - Diodes Division
|
3,707 | 0.72020 | Active | 1 Pair Common Cathode | Schottky | 120 V | 10A | 910 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700 µA @ 120 V | -40°C ~ 150°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Details |
|
MMBD7000-HE3-18
DIODE ARRAY GP 100V 200MA SOT23
Vishay General Semiconductor - Diodes Division
|
6,092 | 0.29000 | Active | 1 Pair Series Connection | Standard | 100 V | 200mA (DC) | 1.1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 3 µA @ 100 V | 150°C (Max) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | Details |
|
GHXS050A060S-D3
DIODE SCHOTT SBD 600V 50A SOT227
SemiQ
|
1 | 55.97000 | Active | 2 Independent | Silicon Carbide Schottky | 600 V | 50A | 1.8 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 600 V | -55°C ~ 175°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Details |
|
IDP20C65D2XKSA1
DIODE 650V 20A RAPID2 TO220-3
Infineon Technologies
|
84 | 1.77000 | Active | 1 Pair Common Cathode | Standard | 650 V | 10A | 2.2 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 28 ns | 40 µA @ 650 V | -40°C ~ 175°C | Through Hole | TO-220-3 | PG-TO220-3-1 | Details |
|
SBR30200CT
DIODE ARRAY SBR 200V 15A TO220AB
Diodes Incorporated
|
1,838 | 1.69000 | Active | 1 Pair Common Cathode | Super Barrier | 200 V | 15A | 980 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 100 µA @ 200 V | -65°C ~ 175°C | Through Hole | TO-220-3 | TO-220-3 | Details |
|
BAV70UE6327HTSA1
DIODE ARRAY GP 80V 200MA SC74-6
Infineon Technologies
|
264,348 | 0.08000 | Not For New Designs | 2 Pair Common Cathode | Standard | 80 V | 200mA (DC) | 1.25 V @ 150 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 150 nA @ 70 V | 150°C (Max) | Surface Mount | SC-74, SOT-457 | PG-SC74-6 | Details |
|
1SS301,LF
DIODE ARRAY GP 80V 100MA USM
Toshiba Semiconductor and Storage
|
9,075 | 0.22000 | Active | 1 Pair Common Cathode | Standard | 80 V | 100mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 500 nA @ 80 V | 125°C (Max) | Surface Mount | SC-70, SOT-323 | SC-70 | Details |
|
CDSV6-4448TI-G
DIODE ARRAY GP 80V 100MA SOT363
Comchip Technology
|
7,465 | 0.10620 | Active | 3 Independent | Standard | 80 V | 500mA (DC) | 1 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 75 V | 150°C (Max) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Details |
|
HSM226STR-E
SCHOTTKY BARRIER DIODE
Renesas Electronics America Inc
|
21,000 | 0.48000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
GP3D030A120U
SIC SCHOTTKY DIODE 1200V TO247-3
SemiQ
|
33 | 16.86000 | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 15A | 1.6 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1.2 kV | -55°C ~ 175°C | Through Hole | TO-247-3 | TO-247-3 | Details |
|
CDBV6-00340TI-G
DIODE ARRAY SCHOTTKY 40V SOT363
Comchip Technology
|
6,360 | 0.09900 | Active | 3 Independent | Schottky | 40 V | 30mA (DC) | 370 mV @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 1 µA @ 10 V | 125°C (Max) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Details |
|
FMU-24S
DIODE ARRAY GP 400V 10A TO220F
Sanken
|
3 | 0.84000 | Obsolete | 1 Pair Common Cathode | Standard | 400 V | 10A | 1.5 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 50 µA @ 400 V | -40°C ~ 150°C | Through Hole | TO-220-3 Full Pack | TO-220F | Details |
|
STPSC8TH13TI
DIODE ARRAY SCHOTTKY 650V TO220
STMicroelectronics
|
9,027 | 7.13000 | Active | 1 Pair Series Connection | Silicon Carbide Schottky | 650 V | 8A | 1.75 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | -40°C ~ 175°C | Through Hole | TO-220-3 | TO-220AB Insulated | Details |
|
SDURF2020CT
DIODE ARRAY GP 200V ITO220AB
SMC Diode Solutions
|
667 | 0.78000 | Active | 1 Pair Common Cathode | Standard | 200 V | - | 1.15 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 15 µA @ 200 V | -55°C ~ 150°C | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | Details |
|
VS-16CTQ100STRRHM3
DIODE SCHOTTKY 100V 8A D2PAK
Vishay General Semiconductor - Diodes Division
|
2,887 | 1.02030 | Active | 1 Pair Common Cathode | Schottky | 100 V | 8A | 720 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 550 µA @ 100 V | -55°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Details |
|
TST30L45C
DIODE SCHOTTKY 45V 15A TO220AB
Taiwan Semiconductor Corporation
|
1,997 | 2.81000 | Active | 1 Pair Common Cathode | Schottky | 45 V | 15A | 670 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 650 µA @ 45 V | -55°C ~ 150°C | Through Hole | TO-220-3 | TO-220AB | Details |
|
V8KM60DUHM3/H
DIODE SCHOTTKY 60V 8A FLATPAK
Vishay General Semiconductor - Diodes Division
|
39,012 | 0.65000 | Active | 2 Independent | Schottky | 60 V | 8A | 640 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 60 V | -40°C ~ 175°C | Surface Mount | 8-PowerTDFN | FlatPAK 5x6 (Dual) | Details |
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