| Mfr Part # | Qty | Price | Product Status | Diode Configuration | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Mounting Type | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GSXF120A060S1-D3
DIODE FAST REC 600V 120A SOT227
SemiQ
|
3,913 | 38.61790 | Active | 2 Independent | Standard | 600 V | 120A | 1.5 V @ 120 A | Fast Recovery =< 500ns, > 200mA (Io) | 105 ns | 25 µA @ 600 V | -55°C ~ 175°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Details |
|
VS-30CTQ040-M3
DIODE ARRAY SCHOTTKY 40V TO220AB
Vishay General Semiconductor - Diodes Division
|
5,839 | 0.81350 | Active | 1 Pair Common Cathode | Schottky | 40 V | 30A | 760 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2 mA @ 40 V | -55°C ~ 175°C | Through Hole | TO-220-3 | TO-220-3 | Details |
|
SD620CS_L2_00001
SURFACE MOUNT SCHOTTKY BARRIER R
Panjit International Inc.
|
7,005 | 0.85000 | Active | 1 Pair Common Cathode | Schottky | 20 V | 6A | 550 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 20 V | -55°C ~ 125°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Details |
|
83CNQ100SM
DIODE SCHOTTKY 100V 40A PRM2-SM
SMC Diode Solutions
|
4,835 | 17.05100 | Active | 1 Pair Common Cathode | Schottky | 100 V | 40A | 1 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 100 V | -55°C ~ 175°C | Through Hole | PRM2-SM | PRM2-SM | Details |
|
MBR2X080A060
DIODE SCHOTTKY 60V 80A SOT227
GeneSiC Semiconductor
|
1,250 | 48.62550 | Active | 2 Independent | Schottky | 60 V | 80A | 750 mV @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 60 V | -40°C ~ 150°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Details |
|
DSSK48-0025B
DIODE ARRAY SCHOTTKY 25V TO220AB
IXYS
|
44 | 3.36000 | Obsolete | 1 Pair Common Cathode | Schottky | 25 V | 25A | 440 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 mA @ 25 V | -55°C ~ 150°C | Through Hole | TO-220-3 | TO-220-3 | Details |
|
MBRT600100
DIODE MODULE 100V 300A 3TOWER
GeneSiC Semiconductor
|
1,649 | 140.20200 | Active | 1 Pair Common Cathode | Schottky | 100 V | 300A | 880 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower | Details |
|
SBR40U200CTB-13
DIODE ARRAY SBR 200V 20A D2PAK
Diodes Incorporated
|
9,527 | 2.57470 | Active | 1 Pair Common Cathode | Super Barrier | 200 V | 20A | 930 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 200 µA @ 200 V | -65°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Details |
|
S16-4150/TR13
DIODE ARRAY GP 50V 400MA 16SOIC
Microchip Technology
|
2,549 | 3.48000 | Active | 8 Independent | Standard | 50 V | 400mA (DC) | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | -55°C ~ 150°C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC | Details |
|
V60100C-M3/4W
DIODE SCHOTTKY 60A 100V TO-220AB
Vishay General Semiconductor - Diodes Division
|
1,000 | 3.00000 | Active | 1 Pair Common Cathode | Schottky | 100 V | 30A | 790 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 100 V | -40°C ~ 150°C | Through Hole | TO-220-3 | TO-220-3 | Details |
|
GSXD050A008S1-D3
DIODE SCHOTTKY 80V 50A SOT227
SemiQ
|
1,688 | 31.87740 | Active | 2 Independent | Schottky | 80 V | 50A | 840 mV @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 80 V | -40°C ~ 150°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Details |
|
MMBD3004S_R1_00001
SOT-23, SWITCHING
Panjit International Inc.
|
5,980 | 0.26000 | Active | 1 Pair Series Connection | Standard | 240 V | 225mA (DC) | 1.25 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 350 V | -55°C ~ 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | Details |
|
BAS 16U E6327
RECTIFIER DIODE
Infineon Technologies
|
9,000 | 0.08000 | Active | 3 Independent | Standard | 80 V | 200mA (DC) | 1.25 V @ 150 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 1 µA @ 75 V | 150°C (Max) | Surface Mount | SC-74, SOT-457 | PG-SC74-6 | Details |
|
CDSH3-4448C-G
DIODE ARRAY GP 80V 250MA SOT523
Comchip Technology
|
9,538 | 0.05980 | Active | 1 Pair Common Cathode | Standard | 80 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 70 V | - | Surface Mount | SOT-523 | SOT-523 | Details |
|
VB30100C-M3/4W
DIODE SCHOTTKY 30A 100V TO-263AB
Vishay General Semiconductor - Diodes Division
|
6,059 | 0.98870 | Active | 1 Pair Common Cathode | Schottky | 100 V | 15A | 800 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | -40°C ~ 150°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Details |
|
APT2X101S20J
DIODE MODULE 200V 120A ISOTOP
Microchip Technology
|
7,045 | 28.32000 | Active | 2 Independent | Schottky | 200 V | 120A | 950 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 2 mA @ 200 V | -55°C ~ 175°C | Chassis Mount | ISOTOP | ISOTOP® | Details |
|
BYQ28ED-200,118
DIODE ARRAY GP 200V 10A DPAK
WeEn Semiconductors
|
6,454 | 0.88000 | Active | 1 Pair Common Cathode | Standard | 200 V | 10A | 1.25 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 200 V | 150°C (Max) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Details |
|
S4D40120D
DIODE SCHOTTKY SILICON CARBIDE S
SMC Diode Solutions
|
290 | 18.84000 | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | -55°C ~ 175°C | Through Hole | TO-247-3 | TO-247AD | Details |
|
G4S12040BM
SIC SCHOTTKY DIODE 1200V 40A 3-P
Global Power Technology-GPT
|
2,354 | 56.85000 | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 64.5A (DC) | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole | TO-247-3 | TO-247AB | Details |
|
FST16080
DIODE MODULE 80V 160A TO249AB
GeneSiC Semiconductor
|
8,604 | 75.11100 | Active | 1 Pair Common Cathode | Schottky | 80 V | 160A (DC) | 880 mV @ 160 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | Chassis Mount | TO-249AB | TO-249AB | Details |
|
FST160200
DIODE SCHOTTKY 200V 80A TO249AB
GeneSiC Semiconductor
|
6,415 | 75.11100 | Active | 1 Pair Common Cathode | Schottky | 200 V | 80A | 920 mV @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 200 V | -55°C ~ 150°C | Chassis Mount | TO-249AB | TO-249AB | Details |
|
TSD20H200CW
DIODE, SCHOTTKY, TRENCH, 20A, 20
Taiwan Semiconductor Corporation
|
2,609 | 1.31240 | Active | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Details |
|
MURT30060R
DIODE MODULE 600V 150A 3TOWER
GeneSiC Semiconductor
|
7,531 | 118.41600 | Active | 1 Pair Common Anode | Standard | 600 V | 150A | 1.7 V @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 50 V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower | Details |
|
BD6100CS_L2_00001
SURFACE MOUNT SCHOTTKY BARRIER R
Panjit International Inc.
|
2,990 | 1.12000 | Active | 1 Pair Common Cathode | Schottky | 100 V | 6A | 800 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 100 V | -65°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Details |
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