| Mfr Part # | Qty | Price | Product Status | Diode Type | Technology | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GBU6D-M3/51
BRIDGE RECT 1PHASE 200V 6A GBU
Vishay General Semiconductor - Diodes Division
|
6,904 | 1.14250 | Active | Single Phase | Standard | 200 V | 6 A | 1 V @ 3 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU | Details |
|
KBPC2508-G
BRIDGE RECT 1PHASE 800V 25A KBPC
Comchip Technology
|
489 | 9.96000 | Active | Single Phase | Standard | 800 V | 25 A | 1.1 V @ 12.5 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, KBPC | KBPC | Details |
|
TS40P05G
BRIDGE RECT 1P 600V 40A TS-6P
Taiwan Semiconductor Corporation
|
8,477 | 1.46130 | Active | Single Phase | Standard | 600 V | 40 A | 1.1 V @ 20 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P | Details |
|
KBPC5010W-G
BRIDGE RECT 1P 1KV 50A KBPC-W
Comchip Technology
|
69 | 11.20000 | Active | Single Phase | Standard | 1 kV | 50 A | 1.1 V @ 25 A | 10 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC-W | Details |
|
DBL105GH
BRIDGE RECT 1PHASE 600V 1A DBL
Taiwan Semiconductor Corporation
|
8,113 | 0.23940 | Active | Single Phase | Standard | 600 V | 1 A | 1.1 V @ 1 A | 2 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | DBL | Details |
|
GBU406-B1-0000HF
RECT BRIDGE 600V 4A GBU
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
4,626 | 0.91000 | Active | Single Phase | Standard | 600 V | 4 A | 1 V @ 2 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, GBU | GBU | Details |
|
KBL405G
BRIDGE RECT 1PHASE 600V 4A KBL
Taiwan Semiconductor Corporation
|
1,024 | 2.21000 | Active | Single Phase | Standard | 600 V | 4 A | 1.1 V @ 4 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | KBL | Details |
|
GBU802
BRIDGE RECT 1PHASE 200V 8A GBU
Diodes Incorporated
|
1,836 | 1.52000 | Active | Single Phase | Standard | 200 V | 8 A | 1 V @ 4 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU | Details |
|
GBI40W
1PH BRIDGE 30X20X3.6 1600V 40A
Diotec Semiconductor
|
500 | 3.77360 | Active | Single Phase | Standard | 1.6 kV | 6 A | 1.1 V @ 20 A | 5 µA @ 1600 V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBI | GBI | Details |
|
GBJ601-F
BRIDGE RECT 1PHASE 100V 6A GBJ
Diodes Incorporated
|
8,585 | 1.52000 | Active | Single Phase | Standard | 100 V | 6 A | 1 V @ 3 A | 5 µA @ 100 V | -65°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ | Details |
|
VUO36-16NO8
BRIDGE RECT 3P 1.6KV 27A FO-B
IXYS
|
8,143 | 15.85000 | Active | Three Phase | Standard | 1.6 kV | 27 A | 1.04 V @ 15 A | 40 µA @ 1600 V | -40°C ~ 150°C (TJ) | QC Terminal | 5-Square, FO-B | FO-B | Details |
|
RS804M
BRIDGE RECT GLASS 400V 8A RS-8M
Rectron USA
|
1,234 | 0.91000 | Active | Single Phase | Standard | 400 V | 8 A | 1.05 V @ 8 A | 500 nA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, RS-8M | RS-8M | Details |
|
RS205M
BRIDGE RECT GLASS 600V 2A RS-2M
Rectron USA
|
3,836 | 0.55000 | Active | Single Phase | Standard | 600 V | 2 A | 1.05 V @ 2 A | 200 nA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, RS-2M | RS-2M | Details |
|
B500S2A-SLIM
1PH BRIDGE SO-DIL 1000V 2.3A
Diotec Semiconductor
|
64,500 | 0.15470 | Active | Single Phase | Standard | 1 kV | 2.3 A | 950 mV @ 2 A | 5 µA @ 1000 V | -50°C ~ 150°C (TJ) | Surface Mount | TO-269AA, 4-BESOP | 4-SOIC | Details |
|
TS8P05GH
BRIDGE RECT 1PHASE 600V 8A TS-6P
Taiwan Semiconductor Corporation
|
8,688 | 1.15990 | Active | Single Phase | Standard | 600 V | 8 A | 1.1 V @ 8 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P | Details |
|
ABS8U
BRIDGE RECT 1PHASE 800V 1A ABS
SMC Diode Solutions
|
3,451 | 0.04840 | Active | Single Phase | Standard | 800 V | 1 A | 1.1 V @ 1 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | ABS | Details |
|
GBLA01-E3/45
BRIDGE RECT 1PHASE 100V 3A GBL
Vishay General Semiconductor - Diodes Division
|
7,893 | 0.66300 | Active | Single Phase | Standard | 100 V | 3 A | 1.1 V @ 4 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL | Details |
|
KBU406G
BRIDGE RECT 1PHASE 800V 4A KBU
Taiwan Semiconductor Corporation
|
3,703 | 1.90270 | Active | Single Phase | Standard | 800 V | 4 A | 1.1 V @ 4 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU | Details |
|
VS-GBPC2512A
BRIDGE RECT 1P 1.2KV 25A GBPC-A
Vishay General Semiconductor - Diodes Division
|
1,769 | 7.60000 | Active | Single Phase | Standard | 1.2 kV | 25 A | - | 2 mA @ 1.2 V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC-A | GBPC-A | Details |
|
GBJ2510-06-G
BRIDGE RECT 1PHASE 1KV 25A GBJ
Comchip Technology
|
7,392 | 1.59220 | Active | Single Phase | Standard | 1 kV | 25 A | 1 V @ 12.5 A | 10 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ | Details |
|
BU2508-M3/51
BRIDGE RECT 1P 800V 3.5A BU
Vishay General Semiconductor - Diodes Division
|
3,838 | 1.95210 | Active | Single Phase | Standard | 800 V | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+™ BU | Details |
|
DF15005S
BRIDGE RECT 1PHASE 50V 1.5A DF-S
Diodes Incorporated
|
5,057 | 0.82360 | Active | Single Phase | Standard | 50 V | 1.5 A | 1.1 V @ 1.5 A | 10 µA @ 50 V | -65°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | DF-S | Details |
|
DF1506S-E3/45
BRIDGE RECT 1PHASE 600V 1.5A DFS
Vishay General Semiconductor - Diodes Division
|
4,503 | 0.82000 | Active | Single Phase | Standard | 600 V | 1.5 A | 1.1 V @ 1.5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | DFS | Details |
|
MP251
BRIDGE RECT 1 PH 100V 25A MP-25
Rectron USA
|
3,389 | 1.50000 | Active | Single Phase | Standard | 100 V | 25 A | 1.05 V @ 12.5 A | 500 nA @ 100 V | -55°C ~ 150°C (TJ) | Chassis Mount | 4-Square, MP-25 | MP-25 | Details |
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