| Mfr Part # | Qty | Price | Product Status | Diode Type | Technology | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DBL104GH
BRIDGE RECT 1PHASE 400V 1A DBL
Taiwan Semiconductor Corporation
|
8,734 | 0.23940 | Active | Single Phase | Standard | 400 V | 1 A | 1.1 V @ 1 A | 2 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | DBL | Details |
|
GBJ808-F
BRIDGE RECT 1PHASE 800V 8A GBJ
Diodes Incorporated
|
8,972 | 1.83670 | Active | Single Phase | Standard | 800 V | 8 A | 1 V @ 4 A | 5 µA @ 800 V | -65°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ | Details |
|
KBP2M_T0_00101
KBP, GENERAL
Panjit International Inc.
|
2,794 | 0.48000 | Active | Single Phase | Standard | 1 kV | 2 A | 1.1 V @ 2 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBP | KBP | Details |
|
GBJ2506A-B1-3000
RECT BRIDGE 600V 25A 6KBJ
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
2,347 | 1.25000 | Active | Single Phase | Standard | 600 V | 25 A | 1 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBJ | 6KBJ | Details |
|
GBU6G-E3/51
BRIDGE RECT 1PHASE 400V 3.8A GBU
Vishay General Semiconductor - Diodes Division
|
3,693 | 1.16420 | Active | Single Phase | Standard | 400 V | 3.8 A | 1 V @ 6 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU | Details |
|
TS10KL100
BRIDGE RECT 1PHASE 1KV 10A KBJL
Taiwan Semiconductor Corporation
|
4,176 | 0.61570 | Active | Single Phase | Standard | 1 kV | 10 A | 1 V @ 5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBJL | KBJL | Details |
|
DB153S
BRIDGE RECT 1P 200V 1.5A DB-S
SMC Diode Solutions
|
8,182 | 0.11620 | Active | Single Phase | Standard | 200 V | 1.5 A | 1.1 V @ 1.5 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | DB-S | Details |
|
NTE170
R-SI BRIDGE 1000V 2A
NTE Electronics, Inc
|
4,242 | 3.00000 | Active | Single Phase | Standard | 1 kV | 2 A | 1.1 V @ 2 A | 10 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP | 4-SIP | Details |
|
RS2002M
BRIDGE RECT GLASS 100V 20A RS20M
Rectron USA
|
8,250 | 1.16000 | Active | Single Phase | Standard | 100 V | 20 A | 1.1 V @ 10 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, RS-20M | RS-20M | Details |
|
GSIB2540-E3/45
BRIDGE RECT 1P 400V 3.5A GSIB-5S
Vishay General Semiconductor - Diodes Division
|
591 | 3.03000 | Active | Single Phase | Standard | 400 V | 3.5 A | 1 V @ 12.5 A | 10 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S | Details |
|
GBPC2510
BRIDGE RECT 1PHASE 1KV 25A GBPC
onsemi
|
1,645 | 6.70000 | Active | Single Phase | Standard | 1 kV | 25 A | 1.1 V @ 12.5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC | Details |
|
PB3010-E3/45
BRIDGE RECT 1P 1KV 30A PB
Vishay General Semiconductor - Diodes Division
|
6,381 | 3.98000 | Active | Single Phase | Standard | 1 kV | 30 A | 1.1 V @ 15 A | 10 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, PB | isoCINK+™ PB | Details |
|
RS401L
BRIDGE RECT GLASS 50V 4A RS-4L
Rectron USA
|
6,283 | 0.78000 | Active | Single Phase | Standard | 50 V | 4 A | 1.05 V @ 4 A | 2 µA @ 50 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, RS-4L | RS-4L | Details |
|
DBL158G
BRIDGE RECT 1P 1.2KV 1.5A DBL
Taiwan Semiconductor Corporation
|
4,026 | 0.27000 | Active | Single Phase | Standard | 1.2 kV | 1.5 A | 1.25 V @ 1.5 A | 2 µA @ 1200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | DBL | Details |
|
GSIB1540-E3/45
BRIDGE RECT 1P 400V 3.5A GSIB-5S
Vishay General Semiconductor - Diodes Division
|
637 | 2.70000 | Active | Single Phase | Standard | 400 V | 3.5 A | 950 mV @ 7.5 A | 10 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S | Details |
|
GBU810G
BRIDGE RECT 1PHASE 1KV 8A GBU
SMC Diode Solutions
|
686 | 1.01000 | Active | Single Phase | Standard | 1 kV | 8 A | 1.1 V @ 8 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | GBU | Details |
|
MD100S16M5-BP
BRIDGE RECT 3PHASE 1.6KV 100A
Micro Commercial Co
|
60 | 46.49000 | Active | Three Phase | Standard | 1.6 kV | 100 A | 1.9 V @ 300 A | 300 µA @ 1600 V | -40°C ~ 150°C (TJ) | Chassis Mount | M5 Module | - | Details |
|
UG6KB10
BRIDGE RECT 1PHASE 100V 6A D3K
SMC Diode Solutions
|
4,307 | 0.27040 | Active | Single Phase | Standard | 100 V | 6 A | 1.1 V @ 6 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K | Details |
|
GBJ8M
8A -1000V - GBJ - BRIDGE
SURGE
|
250 | 0.82000 | Active | Single Phase | Standard | 1 kV | 8 A | 1 V @ 4 A | 10 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ-6 | Details |
|
VBO72-18NO7
BRIDGE RECT 1P 1.8KV 72A PWS-D
IXYS
|
9,582 | 43.39000 | Active | Single Phase | Standard | 1.8 kV | 72 A | 1.08 V @ 30 A | 100 µA @ 1800 V | -40°C ~ 150°C (TJ) | Chassis Mount | PWS-D | PWS-D | Details |
|
DB103-BP
BRIDGE RECT 1PHASE 200V 1A DB-1
Micro Commercial Co
|
2,257 | 0.63000 | Active | Single Phase | Standard | 200 V | 1 A | 1.1 V @ 1 A | 10 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB-1 | Details |
|
MT3516A-A1-0000
RECT BRIDGE 1600V 35A MT35-A
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
3,994 | 7.85000 | Active | Three Phase | Standard | 1.6 kV | 35 A | 1.2 V @ 17.5 A | 10 µA @ 1600 V | -55°C ~ 150°C (TJ) | Chassis Mount | 5-Square, MT | MT | Details |
|
VUO25-16NO8
BRIDGE RECT 3P 1.6KV 25A PWS-E1
IXYS
|
3,084 | 14.14000 | Active | Three Phase | Standard | 1.6 kV | 25 A | 2.2 V @ 150 A | 300 µA @ 1600 V | -40°C ~ 150°C (TJ) | Chassis Mount | PWS-E | PWS-E | Details |
|
GBU6J-E3/45
BRIDGE RECT 1PHASE 600V 3.8A GBU
Vishay General Semiconductor - Diodes Division
|
2,789 | 2.29000 | Active | Single Phase | Standard | 600 V | 3.8 A | 1 V @ 6 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU | Details |
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