512MB LPSDR, X32, 166MHZ, 46NM T
W989D2DBJX6E TR is a Memory manufactured by Winbond Electronics. 512MB LPSDR, X32, 166MHZ, 46NM T. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 90-TFBGA.
In Stock: 4,105
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 512Mb (16M x 32) |
| Memory Interface | LVCMOS |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-VFBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W989D2DBJX6I | Winbond Electronics | IC DRAM 512MBIT PARALLEL 90VFBGA | 100% | View |
| MT46H32M32LFCM-6 IT:A TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 90VFBGA | 100% | View |
| IS43LR32640B-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PAR 90TFBGA | 100% | View |
| AS4C16M32MD1-5BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 90FBGA | 92% | View |
| W94AD6KBHX5E TR | Winbond Electronics | IC DRAM 1GBIT PARALLEL 60VFBGA | 92% | View |
| 71V2556SA100BGGI8 | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 119PBGA | 66% | View |
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