512MB LPSDR, X32, 166MHZ, 46NM
W989D2DBJX6E is a Memory manufactured by Winbond Electronics. 512MB LPSDR, X32, 166MHZ, 46NM. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 90-TFBGA.
In Stock: 6,295
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 512Mb (16M x 32) |
| Memory Interface | LVCMOS |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-VFBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| AS4C16M32MD1-5BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 90FBGA | 92% | View |
| W948D6KBHX5E | Winbond Electronics | IC DRAM 256MBIT PARALLEL 60VFBGA | 92% | View |
| AS4C16M16SA-6BIN | Alliance Memory, Inc. | IC DRAM 256MBIT PARALLEL 54TFBGA | 91% | View |
| MT46H256M32L4SA-48 WT:C TR | Micron Technology Inc. | IC DRAM 8GBIT PARALLEL 168TFBGA | 90% | View |
| 71T75802S100BGI8 | Renesas Electronics America Inc | IC SRAM 18MBIT PARALLEL 119PBGA | 70% | View |
| 71V3556S100PFGI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 100TQFP | 66% | View |
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