IC DRAM 256MBIT PARALLEL 90VFBGA
W988D2FBJX6E is a Memory manufactured by Winbond Electronics. IC DRAM 256MBIT PARALLEL 90VFBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 90-TFBGA.
In Stock: 8,861
| Attribute | Value |
|---|---|
| Product Status | Last Time Buy |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 256Mb (8M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.4 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-VFBGA (8x13) |
W988D2FBJX6E is Last Time Buy. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W988D6FBGX6E TR | Winbond Electronics | IC DRAM 256MBIT PARALLEL 54VFBGA | 100% | View |
| IS42S32160F-6TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | 92% | View |
| IS45S16160J-6BLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 54TFBGA | 92% | View |
| IS42S16160J-6BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 54TFBGA | 92% | View |
| IS42S16160G-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 54TFBGA | 92% | View |
| MT48LC8M16A2P-6A AAT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | 91% | View |
Submit your RFQ for W988D2FBJX6E and get a quote within 24 hours.
3J LIMITED
