IC DRAM 128MBIT PARALLEL 54VFBGA
W987D6HBGX7E TR is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PARALLEL 54VFBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 54-TFBGA.
In Stock: 4,039
| Attribute | Value |
|---|---|
| Product Status | Last Time Buy |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.4 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TFBGA |
| Supplier Device Package | 54-VFBGA (8x9) |
W987D6HBGX7E TR is Last Time Buy. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| AS4C32M16SB-7TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | 90% | View |
| IS42S16160J-7TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | 88% | View |
| MT48LC4M32B2B5-6A AAT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PARALLEL 90VFBGA | 82% | View |
| MT48LC8M16A2B4-6A IT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PARALLEL 54VFBGA | 82% | View |
| IS42S32800J-6TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | 81% | View |
| IS42S16160J-6TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | 81% | View |
Submit your RFQ for W987D6HBGX7E TR and get a quote within 24 hours.
3J LIMITED
