IC DRAM 128MBIT PARALLEL 54VFBGA
W987D6HBGX7E is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PARALLEL 54VFBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 54-TFBGA.
In Stock: 3,519
| Attribute | Value |
|---|---|
| Product Status | Last Time Buy |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.4 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TFBGA |
| Supplier Device Package | 54-VFBGA (8x9) |
W987D6HBGX7E is Last Time Buy. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT48H32M16LFB4-75B IT:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 54VFBGA | 100% | View |
| IS45S16800F-7CTLA2-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | 88% | View |
| IS45S16320F-7CTLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | 88% | View |
| IS42S32160F-7BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90TFBGA | 88% | View |
| MT48LC8M16A2P-6A IT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | 82% | View |
| IS42S16400J-6BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | 81% | View |
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