IC DRAM 128MBIT PARALLEL 54VFBGA
W987D6HBGX6I TR is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PARALLEL 54VFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 54-TFBGA.
In Stock: 5,640
| Attribute | Value |
|---|---|
| Product Status | Last Time Buy |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.4 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TFBGA |
| Supplier Device Package | 54-VFBGA (8x9) |
W987D6HBGX6I TR is Last Time Buy. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS42S81600F-6TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | 92% | View |
| IS42S16800F-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PARALLEL 54TFBGA | 92% | View |
| IS42S16320F-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 54TFBGA | 92% | View |
| IS42S32400E-6TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | 92% | View |
| NDS76PBA-16AT TR | Insignis Technology Corporation | IC DRAM 128MBIT LVTTL 54FBGA | 92% | View |
| NDS66PBA-16IT | Insignis Technology Corporation | IC DRAM 64MBIT LVTTL 54FBGA | 92% | View |
Submit your RFQ for W987D6HBGX6I TR and get a quote within 24 hours.
3J LIMITED
