IC DRAM 128MBIT PARALLEL 54VFBGA
W987D6HBGX6E TR is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PARALLEL 54VFBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 54-TFBGA.
In Stock: 9,284
| Attribute | Value |
|---|---|
| Product Status | Last Time Buy |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.4 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TFBGA |
| Supplier Device Package | 54-VFBGA (8x9) |
W987D6HBGX6E TR is Last Time Buy. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IM5116SDBBBG-6I | Intelligent Memory Ltd. | SDRAM, 512MB, 3.3V, 32MX16, 166M | 94% | View |
| MT48LC8M16A2P-6A XIT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | 91% | View |
| IS42S32200L-7BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | 85% | View |
| IS45S16800F-7TLA2 | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | 85% | View |
| IS45S16160J-7BLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 54TFBGA | 85% | View |
| IS42S32200L-7BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | 85% | View |
Submit your RFQ for W987D6HBGX6E TR and get a quote within 24 hours.
3J LIMITED
