IC DRAM 128MBIT PARALLEL 90VFBGA
W987D2HBJX7E is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PARALLEL 90VFBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 90-TFBGA.
In Stock: 8,545
| Attribute | Value |
|---|---|
| Product Status | Not For New Designs |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 128Mb (4M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.4 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-VFBGA (8x13) |
W987D2HBJX7E is Not For New Designs. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS45S32400F-7BLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PARALLEL 90TFBGA | 88% | View |
| IS42S16400J-7B2LI | ISSI, Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 60TFBGA | 88% | View |
| IS45S16800F-7BLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PARALLEL 54TFBGA | 88% | View |
| IS45S32800D-7TLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | 88% | View |
| IS42S16400F-7BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | 88% | View |
| IS42S83200J-7BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 54TFBGA | 88% | View |
Submit your RFQ for W987D2HBJX7E and get a quote within 24 hours.
3J LIMITED
