IC DRAM 128MBIT PARALLEL 90VFBGA
W987D2HBJX6I TR is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PARALLEL 90VFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 90-TFBGA.
In Stock: 4,394
| Attribute | Value |
|---|---|
| Product Status | Last Time Buy |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 128Mb (4M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.4 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-VFBGA (8x13) |
W987D2HBJX6I TR is Last Time Buy. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS42S16400J-6TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | 92% | View |
| IS42S32400E-6BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PARALLEL 90TFBGA | 92% | View |
| MT48LC16M8A2BB-6A AIT:L | Micron Technology Inc. | IC DRAM 128MBIT PARALLEL 60TFBGA | 91% | View |
| IS42S16800F-7TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | 85% | View |
| IS45S16800F-7BLA2-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PARALLEL 54TFBGA | 85% | View |
| IS42S16160J-7BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 54TFBGA | 85% | View |
Submit your RFQ for W987D2HBJX6I TR and get a quote within 24 hours.
3J LIMITED
