IC DRAM 128MBIT PARALLEL 90VFBGA
W987D2HBJX6E TR is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PARALLEL 90VFBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 90-TFBGA.
In Stock: 8,424
| Attribute | Value |
|---|---|
| Product Status | Last Time Buy |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 128Mb (4M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.4 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-VFBGA (8x13) |
W987D2HBJX6E TR is Last Time Buy. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS45S32400E-6TLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | 92% | View |
| MT48LC4M32B2P-6A AAT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 86TSOP II | 91% | View |
| MT48H32M16LFBF-75 IT:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 54VFBGA | 91% | View |
| MT48LC8M16A2B4-6A XIT:L | Micron Technology Inc. | IC DRAM 128MBIT PARALLEL 54VFBGA | 91% | View |
| IS45S32200L-7TLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | 85% | View |
| IS45S16320F-7BLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 54TFBGA | 85% | View |
Submit your RFQ for W987D2HBJX6E TR and get a quote within 24 hours.
3J LIMITED
