IC DRAM 128MBIT PAR 54TSOP II
W9812G6KH-6 TR is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PAR 54TSOP II. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 3V ~ 3.6V, package / case 54-TSOP (0.400", 10.16mm Width).
In Stock: 6,163
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 5 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS42S16400D-6BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60MINIBGA | 100% | View |
| IS43LR16640A-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 60TWBGA | 92% | View |
| MT46H32M32LFB5-6 IT:B | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 90VFBGA | 92% | View |
| W9864G6KH-5 TR | Winbond Electronics | IC DRAM 64MBIT PAR 54TSOP II | 91% | View |
| W948V6KBHX5E | Winbond Electronics | 256MB LPDDR, X16, 200MHZ | 83% | View |
| 71V3556SA100BQGI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PAR 165CABGA | 74% | View |
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