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W978H2KBVX2E TR - Winbond Electronics - Memory

W978H2KBVX2E TR

Winbond Electronics

256MB LPDDR2, X32, 400MHZ, -25 ~

W978H2KBVX2E TR is a Memory manufactured by Winbond Electronics. 256MB LPDDR2, X32, 400MHZ, -25 ~. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.14V ~ 1.3V, 1.7V ~ 1.95V, package / case 134-VFBGA.

In Stock: 3,579

Product Attributes

AttributeValue
Product StatusNot For New Designs
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR2-S4B
Memory Size256Mb (8M x 32)
Memory InterfaceHSUL_12
Clock Frequency400 MHz
Write Cycle Time - Word, Page15ns
Access Time5.5 ns
Voltage - Supply1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature-25°C ~ 85°C (TC)
Mounting TypeSurface Mount
Package / Case134-VFBGA
Supplier Device Package134-VFBGA (10x11.5)

Frequently Asked Questions

W978H2KBVX2E TR is a Memory manufactured by Winbond Electronics. 256MB LPDDR2, X32, 400MHZ, -25 ~

The mounting type of W978H2KBVX2E TR is Surface Mount.

The operating temperature range of W978H2KBVX2E TR is -25°C ~ 85°C (TC).

The supply voltage of W978H2KBVX2E TR is 1.14V ~ 1.3V, 1.7V ~ 1.95V.

The memory specification of W978H2KBVX2E TR is 256Mb (8M x 32).

Alternative Products

W978H2KBVX2E TR is Not For New Designs. Consider these compatible alternatives:

Part NumberManufacturerDescriptionMatch
W63AH2NBVABI TR Winbond Electronics 1GB LPDDR3, X32, 800MHZ, INDUSTR 71% View
W63AH6NBVACI Winbond Electronics 1GB LPDDR3, X16, 933MHZ, INDUSTR 65% View
AS4C8M32MSA-6BIN Alliance Memory, Inc. IC DRAM 256MBIT PARALLEL 90FBGA 64% View
IS43LR32320B-6BLI ISSI, Integrated Silicon Solution Inc IC DRAM 64MBIT PARALLEL 90LFBGA 59% View
IS46LR32160C-6BLA1-TR ISSI, Integrated Silicon Solution Inc IC DRAM 512MBIT PARALLEL 90TFBGA 57% View
AS4C16M16MSA-6BIN Alliance Memory, Inc. IC DRAM 256MBIT PARALLEL 54FBGA 50% View

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