IC DRAM 1GBIT PARALLEL 84WBGA
W971GG6SB-18 is a Memory manufactured by Winbond Electronics. IC DRAM 1GBIT PARALLEL 84WBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 84-TFBGA.
In Stock: 4,484
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 1Gb (64M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 533 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 350 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 84-TFBGA |
| Supplier Device Package | 84-WBGA (8x12.5) |
W971GG6SB-18 is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W9725G6KB-18 | Winbond Electronics | IC DRAM 256MBIT PARALLEL 84WBGA | 100% | View |
| W971GG6NB-18I | Winbond Electronics | 1GB, DDR2-1066, X16 IND TEMP | 100% | View |
| MT47H128M8SH-187E:M TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 60FBGA | 100% | View |
| W972GG6JB-18 | Winbond Electronics | IC DRAM 2GBIT PARALLEL 84WBGA | 100% | View |
| MT47H32M16NF-187E:H TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | 100% | View |
| IS43DR82560B-25EBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 60TWBGA | 87% | View |
Submit your RFQ for W971GG6SB-18 and get a quote within 24 hours.
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