IC DRAM 128MBIT PARALLEL 90VFBGA
W947D2HBJX6E TR is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PARALLEL 90VFBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 90-TFBGA.
In Stock: 4,338
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 128Mb (4M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-VFBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H16M32LFB5-6 AT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 90VFBGA | 100% | View |
| MT46H128M32L2KQ-6 WT:B TR | Micron Technology Inc. | IC DRAM 4GBIT PARALLEL 168WFBGA | 100% | View |
| IS43LR32640A-5BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 90WBGA | 92% | View |
| W9864G6JT-6I | Winbond Electronics | 64MB SDR SDRAM X16, 166MHZ, IND | 92% | View |
| MT46H64M32LFCM-5 IT:A | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 90VFBGA | 92% | View |
| 71V65603S100BGI | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 119PBGA | 66% | View |
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