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W947D2HBJX5E - Winbond Electronics - Memory

W947D2HBJX5E

Winbond Electronics

IC DRAM 128MBIT PARALLEL 90VFBGA

W947D2HBJX5E is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PARALLEL 90VFBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 90-TFBGA.

In Stock: 1,096

Product Attributes

AttributeValue
Product StatusLast Time Buy
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR
Memory Size128Mb (4M x 32)
Memory InterfaceParallel
Clock Frequency200 MHz
Write Cycle Time - Word, Page15ns
Access Time5 ns
Voltage - Supply1.7V ~ 1.95V
Operating Temperature-25°C ~ 85°C (TC)
Mounting TypeSurface Mount
Package / Case90-TFBGA
Supplier Device Package90-VFBGA (8x13)

Frequently Asked Questions

W947D2HBJX5E is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PARALLEL 90VFBGA

The mounting type of W947D2HBJX5E is Surface Mount.

The operating temperature range of W947D2HBJX5E is -25°C ~ 85°C (TC).

The supply voltage of W947D2HBJX5E is 1.7V ~ 1.95V.

The memory specification of W947D2HBJX5E is 128Mb (4M x 32).

Alternative Products

W947D2HBJX5E is Last Time Buy. Consider these compatible alternatives:

Part NumberManufacturerDescriptionMatch
W949D2DBJX5I Winbond Electronics IC DRAM 512MBIT PARALLEL 90VFBGA 100% View
W947D6HBHX5I Winbond Electronics IC DRAM 128MBIT PARALLEL 60VFBGA 100% View
MT46H64M16LFBF-5 AAT:B TR Micron Technology Inc. IC DRAM 1GBIT PARALLEL 60VFBGA 100% View
IS43LR32640B-5BLI-TR ISSI, Integrated Silicon Solution Inc IC DRAM 2GBIT PAR 90TFBGA 98% View
AS4C16M16SA-6BANTR Alliance Memory, Inc. IC DRAM 256MBIT PARALLEL 54TFBGA 83% View
70V3389S5BCI8 Renesas Electronics America Inc IC SRAM 1.125MBIT PAR 256CABGA 81% View

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