IC DRAM 128MBIT PAR 66TSOP II
W9412G6KH-4 is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PAR 66TSOP II. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 2.4V ~ 2.7V, package / case 66-TSSOP (0.400", 10.16mm Width).
In Stock: 9,378
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 250 MHz |
| Write Cycle Time - Word, Page | 12ns |
| Access Time | 48 ns |
| Voltage - Supply | 2.4V ~ 2.7V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 66-TSSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 66-TSOP II |
W9412G6KH-4 is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W9412G6KH-5 | Winbond Electronics | IC DRAM 128MBIT PAR 66TSOP II | 87% | View |
| W9412G6KH-5 TR | Winbond Electronics | IC DRAM 128MBIT PAR 66TSOP II | 87% | View |
| W9412G6KH-5I | Winbond Electronics | IC DRAM 128MBIT PAR 66TSOP II | 87% | View |
| W9412G6KH-5I TR | Winbond Electronics | IC DRAM 128MBIT PAR 66TSOP II | 87% | View |
| CY62146GE30-45BVXIT | Infineon Technologies | IC SRAM 4MBIT PARALLEL 48VFBGA | 69% | View |
| CY62158H-45ZSXI | Infineon Technologies | IC SRAM 8MBIT PARALLEL 44TSOP II | 58% | View |
Submit your RFQ for W9412G6KH-4 and get a quote within 24 hours.
3J LIMITED
