IC DRAM 4GBIT LVSTL 200TFBGA
W66CQ2NQQAHJ is a Memory manufactured by Winbond Electronics. IC DRAM 4GBIT LVSTL 200TFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 105°C (TC), voltage - supply 1.06V ~ 1.17V, 1.7V ~ 1.95V, package / case 200-TFBGA.
In Stock: 1,433
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 4Gbit |
| Memory Organization | 128M x 32 |
| Memory Interface | LVSTL_11 |
| Clock Frequency | 2.133 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.6 ns |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 200-TFBGA |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W66BQ2NQQAHJ TR | Winbond Electronics | IC DRAM 2GBIT LVSTL 06 200TFBGA | 100% | View |
| W66BP2NQUAHJ TR | Winbond Electronics | IC DRAM 2GBIT LVSTL 11 200TFBGA | 100% | View |
| W66BQ2NQQAGJ TR | Winbond Electronics | IC DRAM 2GBIT LVSTL 06 200TFBGA | 94% | View |
| W66CQ2NQQAGJ TR | Winbond Electronics | IC DRAM 4GBIT LVSTL 200TFBGA | 94% | View |
| W66CP2NQQAGJ TR | Winbond Electronics | IC DRAM 4GBIT LVSTL 200TFBGA | 94% | View |
| W66BQ2NQUAGJ | Winbond Electronics | IC DRAM 2GBIT LVSTL 06 200WFBGA | 94% | View |
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3J LIMITED
