2GB LPDDR4, X16, 1866MHZ, -40C~1
W66BP6NBUAGJ is a Memory manufactured by Winbond Electronics. 2GB LPDDR4, X16, 1866MHZ, -40C~1. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 105°C (TC), voltage - supply 1.06V ~ 1.17V, 1.7V ~ 1.95V, package / case 200-WFBGA.
In Stock: 9,922
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4 |
| Memory Size | 2Gb (128M x 16) |
| Memory Interface | LVSTL_11 |
| Clock Frequency | 1.866 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 200-WFBGA |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W66BL6NBUAGJ TR | Winbond Electronics | 2GB LPDDR4, X16, 1866MHZ, -40C~1 | 100% | View |
| IS46LQ32512A-053BLA2 | ISSI, Integrated Silicon Solution Inc | 16G, 1.06-1.17/1.70-1.95V, LPDDR | 100% | View |
| W66BL6NBUAHJ | Winbond Electronics | 2GB LPDDR4, X16, 2133MHZ, -40C~1 | 94% | View |
| MT53E1G32D2FW-046 AAT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | 94% | View |
| IS46LQ32512A-046BLA2 | ISSI, Integrated Silicon Solution Inc | 16G, 1.06-1.17/1.70-1.95V, LPDDR | 94% | View |
| MT53E2G64D8TN-046 AAT:A | Micron Technology Inc. | IC DRAM 128GBIT PAR 556LFBGA | 94% | View |
Submit your RFQ for W66BP6NBUAGJ and get a quote within 24 hours.
3J LIMITED
