2GB LPDDR4, X16, 1600MHZ, -40C~1
W66BP6NBUAFJ TR is a Memory manufactured by Winbond Electronics. 2GB LPDDR4, X16, 1600MHZ, -40C~1. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 105°C (TC), voltage - supply 1.06V ~ 1.17V, 1.7V ~ 1.95V, package / case 200-WFBGA.
In Stock: 9,884
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4 |
| Memory Size | 2Gb (128M x 16) |
| Memory Interface | LVSTL_11 |
| Clock Frequency | 1.6 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 200-WFBGA |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS46LQ32128A-062TBLA2 | ISSI, Integrated Silicon Solution Inc | IC DRAM 4GBIT LVSTL 200VFBGA | 100% | View |
| W66BQ6NBUAGJ | Winbond Electronics | 2GB LPDDR4X, X16, 1866MHZ, -40C~ | 94% | View |
| W66BQ6NBUAGJ TR | Winbond Electronics | 2GB LPDDR4X, X16, 1866MHZ, -40C~ | 94% | View |
| W66BQ6NBUAHJ TR | Winbond Electronics | 2GB LPDDR4X, X16, 2133MHZ, -40C~ | 88% | View |
| MT53E768M64D4HJ-046 AAT:B | Micron Technology Inc. | IC DRAM 48GBIT PAR 556WFBGA | 88% | View |
| MT53E2G32D4DE-046 AAT:A | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | 88% | View |
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3J LIMITED
