2GB LPDDR4X, X16, 2133MHZ, -40C~
W66BM6NBUAHJ is a Memory manufactured by Winbond Electronics. 2GB LPDDR4X, X16, 2133MHZ, -40C~. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 105°C (TC), voltage - supply 1.06V ~ 1.17V, 1.7V ~ 1.95V, package / case 200-WFBGA.
In Stock: 9,875
| Attribute | Value |
|---|---|
| Product Status | Not For New Designs |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 2Gb (128M x 16) |
| Memory Interface | LVSTL_11 |
| Clock Frequency | 2.133 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 200-WFBGA |
| Supplier Device Package | 200-WFBGA (10x14.5) |
W66BM6NBUAHJ is Not For New Designs. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W66CP2NQUAHJ TR | Winbond Electronics | 4GB LPDDR4, DDP, X32, 2133MHZ, - | 100% | View |
| MT53E256M32D2FW-046 AAT:B | Micron Technology Inc. | IC DRAM 8GBIT PAR 200TFBGA | 100% | View |
| MT53E512M32D2FW-046 AUT:D | Micron Technology Inc. | IC DRAM 16GBIT PAR 200TFBGA | 100% | View |
| MT53E1G16D1FW-046 AAT:A TR | Micron Technology Inc. | IC DRAM 16GBIT PAR 200TFBGA | 100% | View |
| MT53E1G16D1FW-046 AAT:A | Micron Technology Inc. | IC DRAM 16GBIT PAR 200TFBGA | 100% | View |
| IS46LQ32256BL-053BLA2-TR | ISSI, Integrated Silicon Solution Inc | AUTOMOTIVE (TC: -40 TO +105C), 8 | 94% | View |
Submit your RFQ for W66BM6NBUAHJ and get a quote within 24 hours.
3J LIMITED
